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Surface and Quantum Effects in Nanosized Semiconductor

Received: 29 July 2020    Accepted: 11 August 2020    Published: 19 August 2020
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Abstract

Novel properties of nano-scale semiconductors based on the surface and quantum effects have been studied and applications identified. Spherical potential well model is used to study quantum effect whereas basic geometrical models are used for the surface effect. We have shown such effects to be the fundamental factors responsible for the novel nanosized semiconductor characteristics different from the bulk of same material. It is found that the surface area to volume ratio follows inverse power law. Thus at nanoscale, the surface to volume ratio increases significantly to enhance chemical reactivity. In addition, the increased surface area makes most nananocrystals highly soluble in liquid and dramatically lowers their melting temperature. The result strongly suggests also that the shape of the nanoparticles influences the surface area which has huge impact on their properties and performance. Our results of quantum size effect reveal that spatial confinement of charge carriers within semiconductor nanocrystals significantly modulates their properties such as size dependent absorption and emission spectra with non-zero discrete electronic transition energies as well as their blue shift band gaps. Thus by changing the size of the particle, we can literally fine-tune a material property of interest such as optical, electrical, and surface area. Specifically we found that InAs and InSb nano semiconductor optical absorption spectrum, in contrast to their bulk, can be tuned in broad range of UV to IR regions which are favorable operating wavelengths for nano photonic technology such as IR photo detectors and full spectrum solar cells applications.

Published in American Journal of Nano Research and Applications (Volume 8, Issue 3)
DOI 10.11648/j.nano.20200803.11
Page(s) 35-41
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Nanocrystal, Quantum Confinement, Quantum Effect, Semiconductor, Surface Effect

References
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Cite This Article
  • APA Style

    Augustine Ike Onyia, Henry Ifeanyi Ikeri, Abraham Iheanyichukwu Chima. (2020). Surface and Quantum Effects in Nanosized Semiconductor. American Journal of Nano Research and Applications, 8(3), 35-41. https://doi.org/10.11648/j.nano.20200803.11

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    ACS Style

    Augustine Ike Onyia; Henry Ifeanyi Ikeri; Abraham Iheanyichukwu Chima. Surface and Quantum Effects in Nanosized Semiconductor. Am. J. Nano Res. Appl. 2020, 8(3), 35-41. doi: 10.11648/j.nano.20200803.11

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    AMA Style

    Augustine Ike Onyia, Henry Ifeanyi Ikeri, Abraham Iheanyichukwu Chima. Surface and Quantum Effects in Nanosized Semiconductor. Am J Nano Res Appl. 2020;8(3):35-41. doi: 10.11648/j.nano.20200803.11

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  • @article{10.11648/j.nano.20200803.11,
      author = {Augustine Ike Onyia and Henry Ifeanyi Ikeri and Abraham Iheanyichukwu Chima},
      title = {Surface and Quantum Effects in Nanosized Semiconductor},
      journal = {American Journal of Nano Research and Applications},
      volume = {8},
      number = {3},
      pages = {35-41},
      doi = {10.11648/j.nano.20200803.11},
      url = {https://doi.org/10.11648/j.nano.20200803.11},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.20200803.11},
      abstract = {Novel properties of nano-scale semiconductors based on the surface and quantum effects have been studied and applications identified. Spherical potential well model is used to study quantum effect whereas basic geometrical models are used for the surface effect. We have shown such effects to be the fundamental factors responsible for the novel nanosized semiconductor characteristics different from the bulk of same material. It is found that the surface area to volume ratio follows inverse power law. Thus at nanoscale, the surface to volume ratio increases significantly to enhance chemical reactivity. In addition, the increased surface area makes most nananocrystals highly soluble in liquid and dramatically lowers their melting temperature. The result strongly suggests also that the shape of the nanoparticles influences the surface area which has huge impact on their properties and performance. Our results of quantum size effect reveal that spatial confinement of charge carriers within semiconductor nanocrystals significantly modulates their properties such as size dependent absorption and emission spectra with non-zero discrete electronic transition energies as well as their blue shift band gaps. Thus by changing the size of the particle, we can literally fine-tune a material property of interest such as optical, electrical, and surface area. Specifically we found that InAs and InSb nano semiconductor optical absorption spectrum, in contrast to their bulk, can be tuned in broad range of UV to IR regions which are favorable operating wavelengths for nano photonic technology such as IR photo detectors and full spectrum solar cells applications.},
     year = {2020}
    }
    

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  • TY  - JOUR
    T1  - Surface and Quantum Effects in Nanosized Semiconductor
    AU  - Augustine Ike Onyia
    AU  - Henry Ifeanyi Ikeri
    AU  - Abraham Iheanyichukwu Chima
    Y1  - 2020/08/19
    PY  - 2020
    N1  - https://doi.org/10.11648/j.nano.20200803.11
    DO  - 10.11648/j.nano.20200803.11
    T2  - American Journal of Nano Research and Applications
    JF  - American Journal of Nano Research and Applications
    JO  - American Journal of Nano Research and Applications
    SP  - 35
    EP  - 41
    PB  - Science Publishing Group
    SN  - 2575-3738
    UR  - https://doi.org/10.11648/j.nano.20200803.11
    AB  - Novel properties of nano-scale semiconductors based on the surface and quantum effects have been studied and applications identified. Spherical potential well model is used to study quantum effect whereas basic geometrical models are used for the surface effect. We have shown such effects to be the fundamental factors responsible for the novel nanosized semiconductor characteristics different from the bulk of same material. It is found that the surface area to volume ratio follows inverse power law. Thus at nanoscale, the surface to volume ratio increases significantly to enhance chemical reactivity. In addition, the increased surface area makes most nananocrystals highly soluble in liquid and dramatically lowers their melting temperature. The result strongly suggests also that the shape of the nanoparticles influences the surface area which has huge impact on their properties and performance. Our results of quantum size effect reveal that spatial confinement of charge carriers within semiconductor nanocrystals significantly modulates their properties such as size dependent absorption and emission spectra with non-zero discrete electronic transition energies as well as their blue shift band gaps. Thus by changing the size of the particle, we can literally fine-tune a material property of interest such as optical, electrical, and surface area. Specifically we found that InAs and InSb nano semiconductor optical absorption spectrum, in contrast to their bulk, can be tuned in broad range of UV to IR regions which are favorable operating wavelengths for nano photonic technology such as IR photo detectors and full spectrum solar cells applications.
    VL  - 8
    IS  - 3
    ER  - 

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Author Information
  • Department of Industrial Physics, Enugu State University of Science and Technology, Enugu, Nigeria

  • Department of Industrial Physics, Enugu State University of Science and Technology, Enugu, Nigeria

  • Department of Industrial Physics, Enugu State University of Science and Technology, Enugu, Nigeria

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