| Peer-Reviewed

By-Emitter Emulation of the Degradation of a Calibrated 975 nm Tapered Laser Bar Using a Laser Diode Simulation/Emulation Tool

Received: 15 July 2013    Accepted:     Published: 20 August 2013
Views:       Downloads:
Abstract

In this paper, Barlase has been taken a step further by emulating the degradation processes in high power semiconductor laser bars to further deepen the understanding of the behaviour of laser bars. In publications elsewhere where Barlase was used, investigations were done using hypothetical laser bars to emulate various degradation processes commonly found in the operations of lasers. In this paper however, the emulation of a real laser bar is being investigated to compare experimental results to the emulated results to establish a correlation between them. The results established show a close matching between the experimental and the emulated results but the levels of change were not similar. The reason for this can be attributed to the thermal properties used in Barlase and that the consideration of a global thermal solver will be necessary to improve upon the mismatch between the experimental and emulated results.

Published in Journal of Electrical and Electronic Engineering (Volume 1, Issue 3)
DOI 10.11648/j.jeee.20130103.11
Page(s) 55-60
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

By-Emitter, Calibration, Tapered Laser Bar, Heatsink Temperature, Electroluminescence, Emitter, Degradation, Near Infra-Red, Trap Density

References
[1] Schulz, W. and R. Poprawe, 2000. "Manufacturing with novel high-power diode lasers", IEEE Journal of Selected Topics in Quantum Electronics, vol. 6, pp. 696-705.
[2] Gannot, I and R. W. Waynant, 2001. "Introduction to the issue on lasers in medicine and biology", IEEE Journal of Selected Topics in Quantum Electronics, vol. 7, pp. 873-873.
[3] Rochat, E., K. Haroud, and R. Dandliker, 1999. "High-power Nd-doped fiber amplifier for coherent intersatellite links", IEEE Journal of Quantum Electronics, vol. 35, pp. 1419-1423.
[4] Amuzuvi, C. K. and J. C. Attachie, 2013. "Describing a Laser Diode Emulation Tool Using Single Emitter Simulation Results". Research Journal of Applied Sciences, Engineering and Technology, 5(04): 1358-1361.
[5] Xia, R., E. C. Larkins, I. Harrison, S. R. A. Dods, A. V. Andrianov, J. Morgan and J. P. Landesman, 2002. "Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars", IEEE Photon. Technol. Lett., 14, 893.
[6] Tomm J. W., A. Gerhardt, T. Elsaesser, D. Lorenzen, and P. Hennig, 2002. "Simultaneous quantification of strain and defects in high-power diode laser devices", Applied Physics Letters, vol. 81, pp. 3269-3271.
[7] Bull S., J. W. Tomm, M. Oudart, J. Nagle, C. Scholz, K. Boucke, I. Harrison, and E. C. Larkins, 2005. "By-emitter degradation analysis of high-power laser bars", Journal of Applied Physics, vol. 98, p. 063101.
[8] Lim, J. J., T. M. Benson and E. C. Larkins, 2005 "Design of wide-emitter single-mode laser diodes", IEEE J. Quantum Electron., 41, 506.
[9] Bream, P. J., J. J. Lim, S. Bull, A. V. Andrianov, S. Sujecki and E. C. Larkins, 2006. "The impact of nonequilibrium gain in a spectral laser diode model", Opt. Quantum Electron., 38, 1019.
[10] Amuzuvi, C. K., 2013. Emulation and By-Emitter Degradation Analysis of High Power Lasers: Lap Lambert Academic Publishing, Saarbrücken, Germany, ISBN 978-3-659-37035-9.
Cite This Article
  • APA Style

    Christian Kwaku Amuzuvi, Seth Ofori. (2013). By-Emitter Emulation of the Degradation of a Calibrated 975 nm Tapered Laser Bar Using a Laser Diode Simulation/Emulation Tool. Journal of Electrical and Electronic Engineering, 1(3), 55-60. https://doi.org/10.11648/j.jeee.20130103.11

    Copy | Download

    ACS Style

    Christian Kwaku Amuzuvi; Seth Ofori. By-Emitter Emulation of the Degradation of a Calibrated 975 nm Tapered Laser Bar Using a Laser Diode Simulation/Emulation Tool. J. Electr. Electron. Eng. 2013, 1(3), 55-60. doi: 10.11648/j.jeee.20130103.11

    Copy | Download

    AMA Style

    Christian Kwaku Amuzuvi, Seth Ofori. By-Emitter Emulation of the Degradation of a Calibrated 975 nm Tapered Laser Bar Using a Laser Diode Simulation/Emulation Tool. J Electr Electron Eng. 2013;1(3):55-60. doi: 10.11648/j.jeee.20130103.11

    Copy | Download

  • @article{10.11648/j.jeee.20130103.11,
      author = {Christian Kwaku Amuzuvi and Seth Ofori},
      title = {By-Emitter Emulation of the Degradation of a Calibrated 975 nm Tapered Laser Bar Using a Laser Diode Simulation/Emulation Tool},
      journal = {Journal of Electrical and Electronic Engineering},
      volume = {1},
      number = {3},
      pages = {55-60},
      doi = {10.11648/j.jeee.20130103.11},
      url = {https://doi.org/10.11648/j.jeee.20130103.11},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jeee.20130103.11},
      abstract = {In this paper, Barlase has been taken a step further by emulating the degradation processes in high power semiconductor laser bars to further deepen the understanding of the behaviour of laser bars. In publications elsewhere where Barlase was used, investigations were done using hypothetical laser bars to emulate various degradation processes commonly found in the operations of lasers. In this paper however, the emulation of a real laser bar is being investigated to compare experimental results to the emulated results to establish a correlation between them. The results established show a close matching between the experimental and the emulated results but the levels of change were not similar. The reason for this can be attributed to the thermal properties used in Barlase and that the consideration of a global thermal solver will be necessary to improve upon the mismatch between the experimental and emulated results.},
     year = {2013}
    }
    

    Copy | Download

  • TY  - JOUR
    T1  - By-Emitter Emulation of the Degradation of a Calibrated 975 nm Tapered Laser Bar Using a Laser Diode Simulation/Emulation Tool
    AU  - Christian Kwaku Amuzuvi
    AU  - Seth Ofori
    Y1  - 2013/08/20
    PY  - 2013
    N1  - https://doi.org/10.11648/j.jeee.20130103.11
    DO  - 10.11648/j.jeee.20130103.11
    T2  - Journal of Electrical and Electronic Engineering
    JF  - Journal of Electrical and Electronic Engineering
    JO  - Journal of Electrical and Electronic Engineering
    SP  - 55
    EP  - 60
    PB  - Science Publishing Group
    SN  - 2329-1605
    UR  - https://doi.org/10.11648/j.jeee.20130103.11
    AB  - In this paper, Barlase has been taken a step further by emulating the degradation processes in high power semiconductor laser bars to further deepen the understanding of the behaviour of laser bars. In publications elsewhere where Barlase was used, investigations were done using hypothetical laser bars to emulate various degradation processes commonly found in the operations of lasers. In this paper however, the emulation of a real laser bar is being investigated to compare experimental results to the emulated results to establish a correlation between them. The results established show a close matching between the experimental and the emulated results but the levels of change were not similar. The reason for this can be attributed to the thermal properties used in Barlase and that the consideration of a global thermal solver will be necessary to improve upon the mismatch between the experimental and emulated results.
    VL  - 1
    IS  - 3
    ER  - 

    Copy | Download

Author Information
  • University of Mines and Technology, Department of Electrical and Electronic Engineering, Tarkwa, Ghana; Photonic and Radio Frequency Engineering Group (PRFEG), Electrical Systems and Optics Research Division, Faculty of Engineering, University of Nottingham, Nottingham, NG7 2RD, United Kingdom

  • University of Mines and Technology, Department of Electrical and Electronic Engineering, Tarkwa, Ghana

  • Sections