Journal of Electrical and Electronic Engineering

| Peer-Reviewed |

Investigating the Effect of Increased Heatsink Temperature and Packaging-Induced Strain in a Single Emitter Laser Using a Laser Diode Simulation/Emulation Tool

Received: 02 September 2013    Accepted:     Published: 30 September 2013
Views:       Downloads:

Share This Article

Abstract

This paper explores further the capability and versatility of Barlase in establishing deeper understanding of the behaviour of an emitter in a laser bar. The interactions between an emitter and the substrate upon which it is mounted are important in learning more about the degradation process that occurs in lasers. It is well known that various factors come into play in the operation of individual emitters and full laser bars (L-I characteristics, threshold, efficiency, etc.) but one of the most important is the effect of increased heatsink temperature and packaging-induced strain in laser bars. Barlase is therefore used to investigate these effects based on the Arrhenius equation. The relevant parameters are updated at each aging step. Barlase allows a better understanding of how current competition, temperature and the level of defects affect the output power and the degradation rate of a bar.

DOI 10.11648/j.jeee.20130104.12
Published in Journal of Electrical and Electronic Engineering (Volume 1, Issue 4, October 2013)
Page(s) 73-78
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

By-Emitter, Emitter, Quantum Well, Defect, Heatsink Temperature, Non-Radiative Recombination, Packaging-Induced Strain, Degradation, Temperature, Threshold Current, Slope Efficiency

References
[1] Schulz, W. and R. Poprawe, 2000. "Manufacturing with novel high-power diode lasers", IEEE Journal of Selected Topics in Quantum Electronics, vol. 6, pp. 696-705.
[2] Gannot, I and R. W. Waynant, 2001. "Introduction to the issue on lasers in medicine and biology", IEEE Journal of Selected Topics in Quantum Electronics, vol. 7, pp. 873-873.
[3] Rochat, E., K. Haroud, and R. Dandliker, 1999. "High-power Nd-doped fiber amplifier for coherent intersatellite links", IEEE Journal of Quantum Electronics, vol. 35, pp. 1419-1423.
[4] Amuzuvi, C. K. and J. C. Attachie, 2013. "Describing a Laser Diode Emulation Tool Using Single Emitter Simulation Results". Research Journal of Applied Sciences, Engineering and Technology, 5(04): 1358-1361.
[5] Xia, R., E. C. Larkins, I. Harrison, S. R. A. Dods, A. V. Andrianov, J. Morgan and J. P. Landesman, 2002. "Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars", IEEE Photon. Technol. Lett., 14, 893.
[6] Tomm J. W., A. Gerhardt, T. Elsaesser, D. Lorenzen, and P. Hennig, 2002. "Simultaneous quantification of strain and defects in high-power diode laser devices", Applied Physics Letters, vol. 81, pp. 3269-3271.
[7] Bull S., J. W. Tomm, M. Oudart, J. Nagle, C. Scholz, K. Boucke, I. Harrison, and E. C. Larkins, 2005. "By-emitter degradation analysis of high-power laser bars", Journal of Applied Physics, vol. 98, p. 063101.
[8] Lim, J. J., T. M. Benson and E. C. Larkins, 2005 "Design of wide-emitter single-mode laser diodes", IEEE J. Quantum Electron., 41, 506.
[9] Bream, P. J., J. J. Lim, S. Bull, A. V. Andrianov, S. Sujecki and E. C. Larkins, 2006. "The impact of nonequilibrium gain in a spectral laser diode model", Opt. Quantum Electron., 38, 1019.
[10] Amuzuvi, C. K., 2013. Emulation and By-Emitter Degradation Analysis of High Power Lasers: Lap Lambert Academic Publishing, Saarbrücken, Germany, ISBN 978-3-659-37035-9.
[11] Agrawal G. P. and N. K. Dutta, 1993. Semiconductor Lasers: Kluwer Academic Publishers; 2nd Revised edition edition.
[12] Amuzuvi, C. K., Bull S., Tomm J. W., Nagle J., Larkins E. C., Sumpf B., Erbert G., Michel N., and Krakowski M., 2011. "The impact of temperature and packaging-induced strain on current competition and emitter power in laser bars" Applied Physics Letter.
[13] Bull S., 2004. "Photo- and Electroluminescence Microscopy and Spectroscopy Investigation of High Power and High Brightness Semiconductor Laser Diode", Dissertation, University of Nottingham, United Kingdom.
Author Information
  • Department of Electrical and Electronic Engineering, University of Mines and Technology, Tarkwa, Ghana; Photonic and Radio Frequency Engineering Group, Electrical Systems and Optics Research Division, Faculty of Engineering, University of Nottingham, Nottingham, NG7 2RD, United Kingdom

  • Department of Electrical and Electronic Engineering, University of Mines and Technology, Tarkwa, Ghana

Cite This Article
  • APA Style

    Christian Kwaku Amuzuvi, Fuseini Mumuni. (2013). Investigating the Effect of Increased Heatsink Temperature and Packaging-Induced Strain in a Single Emitter Laser Using a Laser Diode Simulation/Emulation Tool. Journal of Electrical and Electronic Engineering, 1(4), 73-78. https://doi.org/10.11648/j.jeee.20130104.12

    Copy | Download

    ACS Style

    Christian Kwaku Amuzuvi; Fuseini Mumuni. Investigating the Effect of Increased Heatsink Temperature and Packaging-Induced Strain in a Single Emitter Laser Using a Laser Diode Simulation/Emulation Tool. J. Electr. Electron. Eng. 2013, 1(4), 73-78. doi: 10.11648/j.jeee.20130104.12

    Copy | Download

    AMA Style

    Christian Kwaku Amuzuvi, Fuseini Mumuni. Investigating the Effect of Increased Heatsink Temperature and Packaging-Induced Strain in a Single Emitter Laser Using a Laser Diode Simulation/Emulation Tool. J Electr Electron Eng. 2013;1(4):73-78. doi: 10.11648/j.jeee.20130104.12

    Copy | Download

  • @article{10.11648/j.jeee.20130104.12,
      author = {Christian Kwaku Amuzuvi and Fuseini Mumuni},
      title = {Investigating the Effect of Increased Heatsink Temperature and Packaging-Induced Strain in a Single Emitter Laser Using a Laser Diode Simulation/Emulation Tool},
      journal = {Journal of Electrical and Electronic Engineering},
      volume = {1},
      number = {4},
      pages = {73-78},
      doi = {10.11648/j.jeee.20130104.12},
      url = {https://doi.org/10.11648/j.jeee.20130104.12},
      eprint = {https://download.sciencepg.com/pdf/10.11648.j.jeee.20130104.12},
      abstract = {This paper explores further the capability and versatility of Barlase in establishing deeper understanding of the behaviour of an emitter in a laser bar. The interactions between an emitter and the substrate upon which it is mounted are important in learning more about the degradation process that occurs in lasers. It is well known that various factors come into play in the operation of individual emitters and full laser bars (L-I characteristics, threshold, efficiency, etc.) but one of the most important is the effect of increased heatsink temperature and packaging-induced strain in laser bars. Barlase is therefore used to investigate these effects based on the Arrhenius equation. The relevant parameters are updated at each aging step. Barlase allows a better understanding of how current competition, temperature and the level of defects affect the output power and the degradation rate of a bar.},
     year = {2013}
    }
    

    Copy | Download

  • TY  - JOUR
    T1  - Investigating the Effect of Increased Heatsink Temperature and Packaging-Induced Strain in a Single Emitter Laser Using a Laser Diode Simulation/Emulation Tool
    AU  - Christian Kwaku Amuzuvi
    AU  - Fuseini Mumuni
    Y1  - 2013/09/30
    PY  - 2013
    N1  - https://doi.org/10.11648/j.jeee.20130104.12
    DO  - 10.11648/j.jeee.20130104.12
    T2  - Journal of Electrical and Electronic Engineering
    JF  - Journal of Electrical and Electronic Engineering
    JO  - Journal of Electrical and Electronic Engineering
    SP  - 73
    EP  - 78
    PB  - Science Publishing Group
    SN  - 2329-1605
    UR  - https://doi.org/10.11648/j.jeee.20130104.12
    AB  - This paper explores further the capability and versatility of Barlase in establishing deeper understanding of the behaviour of an emitter in a laser bar. The interactions between an emitter and the substrate upon which it is mounted are important in learning more about the degradation process that occurs in lasers. It is well known that various factors come into play in the operation of individual emitters and full laser bars (L-I characteristics, threshold, efficiency, etc.) but one of the most important is the effect of increased heatsink temperature and packaging-induced strain in laser bars. Barlase is therefore used to investigate these effects based on the Arrhenius equation. The relevant parameters are updated at each aging step. Barlase allows a better understanding of how current competition, temperature and the level of defects affect the output power and the degradation rate of a bar.
    VL  - 1
    IS  - 4
    ER  - 

    Copy | Download

  • Sections