A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena

Mohamed Ali Belaïd; Ahmed Mohammad Nahhas; Momamed Masmoudi

doi:doi:10.11648/j.jeee.20150306.13

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A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena

Mohamed Ali Belaïd, Ahmed Mohammad Nahhas, Momamed Masmoudi

Published in Journal of Electrical and Electronic Engineering (Volume 3, Issue 6)

Received: 24 August 2015 Accepted: 16 September 2015 Published: 7 December 2015

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Abstract

This paper propose a new electro-thermal model nd presents a method of studying the thermal phenomena in power MOSFET transistors, utilizing Advanced Design System techniques by a Symbolic Defined Device (SDD). The model incorporates the thermal effects and the temperature evolution in the device and captures the heat dissipation from the silicon chip to the ambient air by providing three thermal capacitances and three thermal resistances (thermal network). It enables a better estimation of the device’s reliability and lifetime. Furthermore, it can be used to make a connection between the electrical parameter drifts and the existing failures types. The developed model reflects superior performance in terms of accuracy and flexibility and the results obtained indicate a good agreement with the operating conditions.

Published in	Journal of Electrical and Electronic Engineering (Volume 3, Issue 6)
DOI	10.11648/j.jeee.20150306.13
Page(s)	192-197
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Modelling, Electro-Thermal, Power MOSFET, Temperature, Self-Heating, Thermal Network

References

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[2]	Juraj Marek, Ales Chvála, Daniel Donoval, Patrik Príbytný, Marián Molnár, Miroslav Mikolášek, “Compact model of power MOSFET with temperature dependent Cauer RC network for more accurate thermal simulations,” Solid-State Electronics 2014, Volume 94, pp. 44–50.
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[5]	M.N. Sabry, W. Fikry, K. Abdel Salam, M. M. Awad and A. E. Nasser, A lumped transient thermal model for self-heating in MOSFETs, Microelectronics Journal. 32 (2001) 847-853.
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[9]	Motorola on line, “Motorola’s Electro Thermal (MET) LDMOS Model MosnldMet”, 2003.
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[11]	Y. Yang, Y. Y. Woo, J. Yi, B. Kim, “A New Empirical Large-Signal Model of Si LDMOSFETs for High-Power Amplifier Design,” IEEE Trans. Microwave Theory Tech., vol. 49, pp. 1626-33, Sep. 2001.
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[13]	P. Aloïsi, “Les semiconducteurs de puissance de la physique du solide aux applications,” Ellipses édition marketing S.A., 2001.
[14]	M. A. Belaïd, K. Ketata, K. Mourgues, H. Maanane, M. Masmoudi, J. Marcon, “Comparative analysis of accelerated ageing effects on power RF LDMOS reliability,” Microelectronics Reliability, vol. 45, pp. 1732–1737, 2005.
[15]	M. A. Belaïd, “Contribution à l'analyse des dégradations d'origine thermique et des interactions électrothermiques dans les dispositifs LDMOS RF de puissance,” Thèse de doctorat, Université de Rouen, décembre 2006.
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[17]	M.A. Belaïd et al, “Analysis and Simulation of Self-Heating Effects on RF LDMOS Devices”, in Proc. SISPAD (IEEE), Tokyo, 2005.
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APA Style

Mohamed Ali Belaïd, Ahmed Mohammad Nahhas, Momamed Masmoudi. (2015). A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena. Journal of Electrical and Electronic Engineering, 3(6), 192-197. https://doi.org/10.11648/j.jeee.20150306.13

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ACS Style

Mohamed Ali Belaïd; Ahmed Mohammad Nahhas; Momamed Masmoudi. A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena. J. Electr. Electron. Eng. 2015, 3(6), 192-197. doi: 10.11648/j.jeee.20150306.13

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AMA Style

Mohamed Ali Belaïd, Ahmed Mohammad Nahhas, Momamed Masmoudi. A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena. J Electr Electron Eng. 2015;3(6):192-197. doi: 10.11648/j.jeee.20150306.13

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@article{10.11648/j.jeee.20150306.13,
  author = {Mohamed Ali Belaïd and Ahmed Mohammad Nahhas and Momamed Masmoudi},
  title = {A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena},
  journal = {Journal of Electrical and Electronic Engineering},
  volume = {3},
  number = {6},
  pages = {192-197},
  doi = {10.11648/j.jeee.20150306.13},
  url = {https://doi.org/10.11648/j.jeee.20150306.13},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jeee.20150306.13},
  abstract = {This paper propose a new electro-thermal model nd presents a method of studying the thermal phenomena in power MOSFET transistors, utilizing Advanced Design System techniques by a Symbolic Defined Device (SDD). The model incorporates the thermal effects and the temperature evolution in the device and captures the heat dissipation from the silicon chip to the ambient air by providing three thermal capacitances and three thermal resistances (thermal network). It enables a better estimation of the device’s reliability and lifetime. Furthermore, it can be used to make a connection between the electrical parameter drifts and the existing failures types. The developed model reflects superior performance in terms of accuracy and flexibility and the results obtained indicate a good agreement with the operating conditions.},
 year = {2015}
}

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TY  - JOUR
T1  - A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena
AU  - Mohamed Ali Belaïd
AU  - Ahmed Mohammad Nahhas
AU  - Momamed Masmoudi
Y1  - 2015/12/07
PY  - 2015
N1  - https://doi.org/10.11648/j.jeee.20150306.13
DO  - 10.11648/j.jeee.20150306.13
T2  - Journal of Electrical and Electronic Engineering
JF  - Journal of Electrical and Electronic Engineering
JO  - Journal of Electrical and Electronic Engineering
SP  - 192
EP  - 197
PB  - Science Publishing Group
SN  - 2329-1605
UR  - https://doi.org/10.11648/j.jeee.20150306.13
AB  - This paper propose a new electro-thermal model nd presents a method of studying the thermal phenomena in power MOSFET transistors, utilizing Advanced Design System techniques by a Symbolic Defined Device (SDD). The model incorporates the thermal effects and the temperature evolution in the device and captures the heat dissipation from the silicon chip to the ambient air by providing three thermal capacitances and three thermal resistances (thermal network). It enables a better estimation of the device’s reliability and lifetime. Furthermore, it can be used to make a connection between the electrical parameter drifts and the existing failures types. The developed model reflects superior performance in terms of accuracy and flexibility and the results obtained indicate a good agreement with the operating conditions.
VL  - 3
IS  - 6
ER  -

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Author Information

Mohamed Ali Belaïd
Ahmed Mohammad Nahhas

ECED, CEL, Umm-Al-Qura University, Makkah, Saudi Arabia
Momamed Masmoudi

GPM-UMR CNRS, University of Rouen, Saint Etienne du Rouvray, France

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APA Style

Mohamed Ali Belaïd, Ahmed Mohammad Nahhas, Momamed Masmoudi. (2015). A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena. Journal of Electrical and Electronic Engineering, 3(6), 192-197. https://doi.org/10.11648/j.jeee.20150306.13

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ACS Style

Mohamed Ali Belaïd; Ahmed Mohammad Nahhas; Momamed Masmoudi. A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena. J. Electr. Electron. Eng. 2015, 3(6), 192-197. doi: 10.11648/j.jeee.20150306.13

Copy | Download

AMA Style

Mohamed Ali Belaïd, Ahmed Mohammad Nahhas, Momamed Masmoudi. A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena. J Electr Electron Eng. 2015;3(6):192-197. doi: 10.11648/j.jeee.20150306.13

Copy | Download

@article{10.11648/j.jeee.20150306.13,
  author = {Mohamed Ali Belaïd and Ahmed Mohammad Nahhas and Momamed Masmoudi},
  title = {A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena},
  journal = {Journal of Electrical and Electronic Engineering},
  volume = {3},
  number = {6},
  pages = {192-197},
  doi = {10.11648/j.jeee.20150306.13},
  url = {https://doi.org/10.11648/j.jeee.20150306.13},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jeee.20150306.13},
  abstract = {This paper propose a new electro-thermal model nd presents a method of studying the thermal phenomena in power MOSFET transistors, utilizing Advanced Design System techniques by a Symbolic Defined Device (SDD). The model incorporates the thermal effects and the temperature evolution in the device and captures the heat dissipation from the silicon chip to the ambient air by providing three thermal capacitances and three thermal resistances (thermal network). It enables a better estimation of the device’s reliability and lifetime. Furthermore, it can be used to make a connection between the electrical parameter drifts and the existing failures types. The developed model reflects superior performance in terms of accuracy and flexibility and the results obtained indicate a good agreement with the operating conditions.},
 year = {2015}
}

Copy | Download

TY  - JOUR
T1  - A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena
AU  - Mohamed Ali Belaïd
AU  - Ahmed Mohammad Nahhas
AU  - Momamed Masmoudi
Y1  - 2015/12/07
PY  - 2015
N1  - https://doi.org/10.11648/j.jeee.20150306.13
DO  - 10.11648/j.jeee.20150306.13
T2  - Journal of Electrical and Electronic Engineering
JF  - Journal of Electrical and Electronic Engineering
JO  - Journal of Electrical and Electronic Engineering
SP  - 192
EP  - 197
PB  - Science Publishing Group
SN  - 2329-1605
UR  - https://doi.org/10.11648/j.jeee.20150306.13
AB  - This paper propose a new electro-thermal model nd presents a method of studying the thermal phenomena in power MOSFET transistors, utilizing Advanced Design System techniques by a Symbolic Defined Device (SDD). The model incorporates the thermal effects and the temperature evolution in the device and captures the heat dissipation from the silicon chip to the ambient air by providing three thermal capacitances and three thermal resistances (thermal network). It enables a better estimation of the device’s reliability and lifetime. Furthermore, it can be used to make a connection between the electrical parameter drifts and the existing failures types. The developed model reflects superior performance in terms of accuracy and flexibility and the results obtained indicate a good agreement with the operating conditions.
VL  - 3
IS  - 6
ER  -

Copy | Download