Journal of Electrical and Electronic Engineering
Volume 4, Issue 2, April 2016, Pages: 18-23
Received: Apr. 6, 2016;
Published: Apr. 7, 2016
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Shi Mingming, Jiangsu Electric Power Research Institute, Nanjing, China
Lu Wenwei, Nanjing Institute of Technology, Nanjing, China
Ge Le, Nanjing Institute of Technology, Nanjing, China
Analyzing the research status and development trend of SiC (Silicon Carbide) power device, this article describes the latest research results of switching characteristics and power loss characteristics of SiC power device. With detailed analysis on switching characteristics of Schottky Barrier Diode (SBD) and MOSFET, this paper emphasizes on the differences between them and the corresponding power devices. The comparison study between power loss characteristics of MPS and valve loss of silicon carbide thyristor for ultra-high voltage, also and the differences in power loss of switching power supply between SiC MOSFET and Si MOSFET provide scientific basis for the optimal selection and application of SiC power device.
Comprehensive Analysis on Characteristics of SiC Power Device, Journal of Electrical and Electronic Engineering.
Vol. 4, No. 2,
2016, pp. 18-23.
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