Journal of Electrical and Electronic Engineering

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Comprehensive Analysis on Characteristics of SiC Power Device

Received: 06 April 2016    Accepted:     Published: 07 April 2016
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Abstract

Analyzing the research status and development trend of SiC (Silicon Carbide) power device, this article describes the latest research results of switching characteristics and power loss characteristics of SiC power device. With detailed analysis on switching characteristics of Schottky Barrier Diode (SBD) and MOSFET, this paper emphasizes on the differences between them and the corresponding power devices. The comparison study between power loss characteristics of MPS and valve loss of silicon carbide thyristor for ultra-high voltage, also and the differences in power loss of switching power supply between SiC MOSFET and Si MOSFET provide scientific basis for the optimal selection and application of SiC power device.

DOI 10.11648/j.jeee.20160402.13
Published in Journal of Electrical and Electronic Engineering (Volume 4, Issue 2, April 2016)
Page(s) 18-23
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

SiC, Power Device, Switching Characteristics, Power Loss Characteristics

References
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[7] Alatise O, Parker-Allotey N A, Mawby P. The dynamic performance of SiC Schottky barrier diodes with parasitic inductances over a wide temperature range [A]. PEMD2012 [C]. 2012, 1-6.
[8] Zhao Bin, Qin Haihong, Ma Ceyu, et al. Exploration of switching characteristics of SiC-based power devices[J]. Advanced Technology of Electrical Engineering and Energy, 2014, 33(3): 18-22.
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[18] Wen Jialiang, Zha Kunpeng, Gao Chong, et al. Research and development of whole-set operational test UHVDC thyristor valves [J]. Power System Technology, 2010, 34(8): 1-5.
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Author Information
  • Jiangsu Electric Power Research Institute, Nanjing, China

  • Nanjing Institute of Technology, Nanjing, China

  • Nanjing Institute of Technology, Nanjing, China

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  • APA Style

    Shi Mingming, Lu Wenwei, Ge Le. (2016). Comprehensive Analysis on Characteristics of SiC Power Device. Journal of Electrical and Electronic Engineering, 4(2), 18-23. https://doi.org/10.11648/j.jeee.20160402.13

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    ACS Style

    Shi Mingming; Lu Wenwei; Ge Le. Comprehensive Analysis on Characteristics of SiC Power Device. J. Electr. Electron. Eng. 2016, 4(2), 18-23. doi: 10.11648/j.jeee.20160402.13

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    AMA Style

    Shi Mingming, Lu Wenwei, Ge Le. Comprehensive Analysis on Characteristics of SiC Power Device. J Electr Electron Eng. 2016;4(2):18-23. doi: 10.11648/j.jeee.20160402.13

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  • @article{10.11648/j.jeee.20160402.13,
      author = {Shi Mingming and Lu Wenwei and Ge Le},
      title = {Comprehensive Analysis on Characteristics of SiC Power Device},
      journal = {Journal of Electrical and Electronic Engineering},
      volume = {4},
      number = {2},
      pages = {18-23},
      doi = {10.11648/j.jeee.20160402.13},
      url = {https://doi.org/10.11648/j.jeee.20160402.13},
      eprint = {https://download.sciencepg.com/pdf/10.11648.j.jeee.20160402.13},
      abstract = {Analyzing the research status and development trend of SiC (Silicon Carbide) power device, this article describes the latest research results of switching characteristics and power loss characteristics of SiC power device. With detailed analysis on switching characteristics of Schottky Barrier Diode (SBD) and MOSFET, this paper emphasizes on the differences between them and the corresponding power devices. The comparison study between power loss characteristics of MPS and valve loss of silicon carbide thyristor for ultra-high voltage, also and the differences in power loss of switching power supply between SiC MOSFET and Si MOSFET provide scientific basis for the optimal selection and application of SiC power device.},
     year = {2016}
    }
    

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  • TY  - JOUR
    T1  - Comprehensive Analysis on Characteristics of SiC Power Device
    AU  - Shi Mingming
    AU  - Lu Wenwei
    AU  - Ge Le
    Y1  - 2016/04/07
    PY  - 2016
    N1  - https://doi.org/10.11648/j.jeee.20160402.13
    DO  - 10.11648/j.jeee.20160402.13
    T2  - Journal of Electrical and Electronic Engineering
    JF  - Journal of Electrical and Electronic Engineering
    JO  - Journal of Electrical and Electronic Engineering
    SP  - 18
    EP  - 23
    PB  - Science Publishing Group
    SN  - 2329-1605
    UR  - https://doi.org/10.11648/j.jeee.20160402.13
    AB  - Analyzing the research status and development trend of SiC (Silicon Carbide) power device, this article describes the latest research results of switching characteristics and power loss characteristics of SiC power device. With detailed analysis on switching characteristics of Schottky Barrier Diode (SBD) and MOSFET, this paper emphasizes on the differences between them and the corresponding power devices. The comparison study between power loss characteristics of MPS and valve loss of silicon carbide thyristor for ultra-high voltage, also and the differences in power loss of switching power supply between SiC MOSFET and Si MOSFET provide scientific basis for the optimal selection and application of SiC power device.
    VL  - 4
    IS  - 2
    ER  - 

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