Journal of Electrical and Electronic Engineering
Volume 4, Issue 3, June 2016, Pages: 73-77
Received: Jun. 16, 2016;
Published: Jun. 17, 2016
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Hai Jun Zhang, School of Computer Science & Information Engineering, Shanghai Institute of Technology, Shanghai, China
Wan Jun Yu, School of Computer Science & Information Engineering, Shanghai Institute of Technology, Shanghai, China
In modern society, intelligent devices equipped with flash memory are very popular. It has many wonderful characteristics, such as small, fast, little consumption, shock resistance and so on. Flash memory is divided into NOR memory and NAND memory. The NOR memory can be quickly read with byte data which is developed into data memory for code storage. A new algorithm is needed to optimize the performance of the flash memory. In this paper, we propose a new strategy for replacement to focus on reducing the execution time of the replacement cost and I / O, which is to improve the performance of the algorithm performance. Trace-driven method has a better performance than the existing algorithms in terms of cost and execution time.
Hai Jun Zhang,
Wan Jun Yu,
Page Replacement Algorithm for NAND Flash Used in Mobile Devices, Journal of Electrical and Electronic Engineering.
Vol. 4, No. 3,
2016, pp. 73-77.
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