Thin films of Noble metals such as Iridium have several potential applications in ICs. Electronic devices are fabricated on the integrated circuits that include transistor, capacitor and resistance. They can be used as electrodes in DRAMs and FRAMs, and as gate electrodes in MOSFETs. Noble metals are excellent metals for electrode fabrication because chemical stability, highly electrical resistance, highly work function and many of them can withstand highly oxidizing conditions. In this paper, emphasis is on reaction mechanisms and limits, leakage currents, electrodes and electrode interfaces and deposition techniques.
| Published in |
Journal of Electrical and Electronic Engineering (Volume 3, Issue 2-1)
This article belongs to the Special Issue Research and Practices in Electrical and Electronic Engineering in Developing Countries |
| DOI | 10.11648/j.jeee.s.2015030201.18 |
| Page(s) | 35-38 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2024. Published by Science Publishing Group |
Atomic Layer Deposition, Precursor, Gate Electrode, Dynamic and Ferroelectric Memories, Capacitors
| [1] | Ritala, M. and Leskelä, M., Atomic layer deposition of thin films for microelectronics, Electrochem.Soc. Proc., 2003-08 (2003) 479–490. |
| [2] | Aaltonen, T., Ritala, M., and Leskelä, M., Atomic layer deposition of noble metals, in Advanced Metallization Conference 2004 (AMC 2004), (Eds: D. Erb, P. Ramm, K. Masu, and A. Osaki), Materials Research Society (2005) 663–667. |
| [3] | Jylhä, O., Saarinen, R., Lindblad, M., and Krause, O., Iridium on porous supports prepared by ALD for heterogeneous catalysis applications, ALD 2004, Helsinki, August 16-18 (2004). |
| [4] | Aaltonen, T., Ritala, M., Sammelselg, V., and Leskelä, M., Atomic layer deposition of ridium thin films, J. Electrochem. Soc., 151 (2004) G489–G492. |
| [5] | Aaltonen, T., Ritala, M., and Leskelä, M., Atomic layer deposition of noble metals, in Advanced Metallization Conference 2004 (AMC 2004), (Eds: D. Erb, P. Ramm, K. Masu, and A. Osaki), Materials Research Society (2005) 663–667. |
| [6] | Mandelman, J. A., Dennard, R. H., Bronner, G. B., DeBrosse, J. K., Divakaruni, R., Li, Y., and Radens, C. J., Challenges and future directions for the scaling of dynamic random-access memory (DRAM), IBM. J. Res. Develop., 46 (2002) 187–212. |
| [7] | Iwai, H. and Ohmi, S., Silicon integrated circuit technology from past to future, Micro electron. Reliab. 42 (2002) 465–491. |
| [8] | Ishiwara, H., Recent progress of ferroelectric memories, Int. J. High Speed Electron. Syst., 12 (2002) 315–323. |
| [9] | Yoon, D.-S., Roh, J. S., Baik, H. K., and Lee, S.-M., Future direction for a diffusion barrier in future high-density volatile and nonvolatile memory devices, Crit. Rev. Solid State Mater. Sci., 27 (2002)143–226. |
APA Style
Sakine Shirvaliloo, Hale Kangarloo. (2014). Production of Iridium Metal Thin Films for Application as Electrodes in DRAMs and FRAMs. Journal of Electrical and Electronic Engineering, 3(2-1), 35-38. https://doi.org/10.11648/j.jeee.s.2015030201.18
ACS Style
Sakine Shirvaliloo; Hale Kangarloo. Production of Iridium Metal Thin Films for Application as Electrodes in DRAMs and FRAMs. J. Electr. Electron. Eng. 2014, 3(2-1), 35-38. doi: 10.11648/j.jeee.s.2015030201.18
AMA Style
Sakine Shirvaliloo, Hale Kangarloo. Production of Iridium Metal Thin Films for Application as Electrodes in DRAMs and FRAMs. J Electr Electron Eng. 2014;3(2-1):35-38. doi: 10.11648/j.jeee.s.2015030201.18
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Download@article{10.11648/j.jeee.s.2015030201.18,
author = {Sakine Shirvaliloo and Hale Kangarloo},
title = {Production of Iridium Metal Thin Films for Application as Electrodes in DRAMs and FRAMs},
journal = {Journal of Electrical and Electronic Engineering},
volume = {3},
number = {2-1},
pages = {35-38},
doi = {10.11648/j.jeee.s.2015030201.18},
url = {https://doi.org/10.11648/j.jeee.s.2015030201.18},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jeee.s.2015030201.18},
abstract = {Thin films of Noble metals such as Iridium have several potential applications in ICs. Electronic devices are fabricated on the integrated circuits that include transistor, capacitor and resistance. They can be used as electrodes in DRAMs and FRAMs, and as gate electrodes in MOSFETs. Noble metals are excellent metals for electrode fabrication because chemical stability, highly electrical resistance, highly work function and many of them can withstand highly oxidizing conditions. In this paper, emphasis is on reaction mechanisms and limits, leakage currents, electrodes and electrode interfaces and deposition techniques.},
year = {2014}
}
TY - JOUR T1 - Production of Iridium Metal Thin Films for Application as Electrodes in DRAMs and FRAMs AU - Sakine Shirvaliloo AU - Hale Kangarloo Y1 - 2014/12/27 PY - 2014 N1 - https://doi.org/10.11648/j.jeee.s.2015030201.18 DO - 10.11648/j.jeee.s.2015030201.18 T2 - Journal of Electrical and Electronic Engineering JF - Journal of Electrical and Electronic Engineering JO - Journal of Electrical and Electronic Engineering SP - 35 EP - 38 PB - Science Publishing Group SN - 2329-1605 UR - https://doi.org/10.11648/j.jeee.s.2015030201.18 AB - Thin films of Noble metals such as Iridium have several potential applications in ICs. Electronic devices are fabricated on the integrated circuits that include transistor, capacitor and resistance. They can be used as electrodes in DRAMs and FRAMs, and as gate electrodes in MOSFETs. Noble metals are excellent metals for electrode fabrication because chemical stability, highly electrical resistance, highly work function and many of them can withstand highly oxidizing conditions. In this paper, emphasis is on reaction mechanisms and limits, leakage currents, electrodes and electrode interfaces and deposition techniques. VL - 3 IS - 2-1 ER -
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