Nuclear Science

| Peer-Reviewed |

Evaluating of Simulating the Transportation of Electron in Intelligent Information Systems and High-Tech Applicants

Received: 23 March 2019    Accepted: 25 June 2019    Published: 09 July 2019
Views:       Downloads:

Share This Article

Abstract

The interest to study electron transport in semiconductor devices at very high electric field has been increased in the last decades and assessment of Monte Carlo simulation of electron transport in ZnO diode in intelligent information systems is of high significance. The Monte Carlo method as applied to semiconductor transport is a simulation of the trajectories of individual Carriers as they move through a device under the influence of external forces and subject to random scattering events. Monte Carlo simulation is performed to study quasi-ballistic transport of electrons in n+nn+ ZnO diode. In this simulation, the spatial motion of the electrons is semi classical and the scattering mechanisms taken into account are those due to acoustic phonons, non-polar optical phonons, polar optical phonons and ionized impurities. The simulation results are reported for different temperatures and voltages. It is also found that the transient properties of ZnO-made diode are not much sensitive to environment temperature changes, and thus the use of this substance is highly recommended in manufacture of electronic equipment.

DOI 10.11648/j.ns.20190401.12
Published in Nuclear Science (Volume 4, Issue 1, March 2019)
Page(s) 6-10
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Ensemble Monte Carlo, Ellipsoidal Valleys, Brillouin Zone, Drift Velocity

References
[1] F. Nofeli, H. Arabshahi, ‘’Electronic transport properties in bulk ZnO and Zn1- xMgxO using Monte Carlo simulation’’, Global Journal of Science Frontier Research (A), GJSFR, Volume 15 Issue 3. ISSN: 2249-4626, Jun 2015.
[2] F. Nofeli, M. Abedzadeh Fayzabadi, ‘’Monte Carlo simulation in InAsxP1-x, InAs and InP at high field application’’, International Journal of Engineering Research and Applications, ISSN: 2248-9622, Vol. 3, Issue 5, pp. 732-735, Sep-Oct 2013.
[3] Shahrak, Mehrdad Zaker, and Shahriar Mohammadi. "Middle east user navigation in online social networks and interactions in e-commerce, an analogy." Advances in Computer Science: an International Journal 3, no. 2 (2014): 32-36.
[4] Niknam, A., & Farhang, K. (2018). Vibration Instability in a Large Motion Bistable Compliant Mechanism due to Stribeck Friction. Journal of Vibration and Acoustics.
[5] F. Nofeli, H. Arabshahi, M. H. Tayarani, ‘’Steady-State and transient electron transport in bulk ZnO and Zn1-xMgxO semiconductors’’, International Journal of Engineering and Technical Research, ISSN: 2321-0869, Volume-2, Issue-8, Aug 2014.
[6] X. M. Weng and H. L. Cui, “Simulation of a submicron 3C–SiC ballistic diode based on the Lei–Ting hydrodynamic balance equations” J. Appl. Phys., Vol. 83, No. 6, 15 March 1998.
[7] Yoshihiro Tomita, Hirofumi Ikegami, and Hiroki I. Fujishiro “Monte Carlo study of high-field electron transport characteristics in AlGaN/GaN heterostructure considering dislocation scattering” phys. stat. sol. (c) 4, No. 7, 2695– 2699 (2007).
[8] Pour, M. S., Bou-Harb, E., Varma, K., Neshenko, N., Pados, D. A., & Choo, K. K. R. (2019). Comprehending the IoT cyber threat landscape: A data dimensionality reduction technique to infer and characterize Internet-scale IoT probing campaigns. Digital Investigation, 28, S40-S49.
[9] Pour, M. S., & Salmasizadeh, M. (2017). A New CPA Resistant Software Implementation for Symmetric Ciphers with Smoothed Power Consumption: SIMON Case Study. ISeCure, 9 (2).
[10] Pour, M. S., & Bou-Harb, E. (2018, May). Implications of Theoretic Derivations on Empirical Passive Measurements for Effective Cyber Threat Intelligence Generation. In 2018 IEEE International Conference on Communications (ICC) (pp. 1-7). IEEE.
[11] Zakershahrak, Mehrdad, Akshay Sonawane, Ze Gong, and Yu Zhang. "Interactive Plan Explicability in Human-Robot Teaming." In 2018 27th IEEE International Symposium on Robot and Human Interactive Communication (RO-MAN), pp. 1012-1017. IEEE, 2018.
[12] Balalian, A. A., Simonyan, H., Hekimian, K., Deckelbaum, R. J., & Sargsyan, A. (2017). Prevalence and determinants of stunting in a conflict-ridden border region in Armenia-a cross-sectional study. BMC Nutrition, 3 (1), 85.
[13] F. Nofeli, “High field electron transport in Aln and AlGaN semiconductors”, International Journal of Engineering Research and Applications, ISSN: 2248-9622, Vol. 3, Issue 4, pp. 2679-2682, Jul-Aug 2013.
[14] W. Martienssen and H. Warlimont (Eds.), “Springer hand book of condensed Matter and Materials Data”, Springer, 2005.
[15] Esmaeili, S., Nasiri, M., Dadashi, N., & Safari, H. (2016). Wave function properties of a single and a system of magnetic flux tube (s) oscillations. Journal of Geophysical Research: Space Physics, 121 (10), 9340-9355.
[16] Chattopadyay, D., Queissev, H. J., Review of Modern Physics, 85, 1999.
[17] E Starikovy, P Shiktorovy, V Gru zinskisy, T Gonz´alezz, M J Mart´ınz, D Pardoz, L Reggianix and L Varani “Hydrodynamic and Monte Carlo simulation of steady-state transport and noise in submicrometre n+nn+ silicon structures”, Semicond. Sci. Technol. 11 (1996) 865–872. Printed in the UK.
[18] Shahrak, Mehrdad Zaker, Mengmei Ye, Viswanathan Swaminathan, and Sheng Wei. "Two-way real time multimedia stream authentication using physical unclonable functions." In Multimedia Signal Processing (MMSP), 2016 IEEE 18th International Workshop on, pp. 1-4. IEEE, 2016.
[19] Shodja, H. M., Khezri, M., Hashemian, A., & Behzadan, A. (2010). RKPM with augmented corrected collocation method for treatment of material discontinuities. Computer Modeling in Engineering & Sciences (CMES), 62 (2), 171-204.
[20] F. Nofeli, M. H. Tayarani, H. Arabshahi, “Electron transport properties in bulk ZnO and Zn1-xMgxO materials”, International Journal of Engineering Inventions, E-ISSN: 2278-7461, p-ISSN: 2319-6491, Volume 4, Issue 3, PP: 22-2, Aug 2014.
[21] Zaker Shahrak, Mehrdad. "Secure and lightweight hardware authentication using isolated physical unclonable function." (2016).
[22] Khiabani, A. G. and Babazadeh, R., 2016. Design of robust fractional-order lead–lag controller for uncertain systems. IET Control Theory & Applications, 10 (18), pp. 2447-2455.
[23] Ranjbar, O. A., Lin, Z., & Volkov, A. N. (2018). One-dimensional kinetic simulations of plume expansion induced by multi-pulse laser irradiation in the burst mode at 266 nm wavelength. Vacuum, 157, 361-375.
Author Information
  • Department of Electrical Engineering, University of Ohio, Ohio, USA

  • Department of Electrical Engineering, University of Athena, Athena, Greece

Cite This Article
  • APA Style

    Afroditi Skafida, Katherina Dalaka. (2019). Evaluating of Simulating the Transportation of Electron in Intelligent Information Systems and High-Tech Applicants. Nuclear Science, 4(1), 6-10. https://doi.org/10.11648/j.ns.20190401.12

    Copy | Download

    ACS Style

    Afroditi Skafida; Katherina Dalaka. Evaluating of Simulating the Transportation of Electron in Intelligent Information Systems and High-Tech Applicants. Nucl. Sci. 2019, 4(1), 6-10. doi: 10.11648/j.ns.20190401.12

    Copy | Download

    AMA Style

    Afroditi Skafida, Katherina Dalaka. Evaluating of Simulating the Transportation of Electron in Intelligent Information Systems and High-Tech Applicants. Nucl Sci. 2019;4(1):6-10. doi: 10.11648/j.ns.20190401.12

    Copy | Download

  • @article{10.11648/j.ns.20190401.12,
      author = {Afroditi Skafida and Katherina Dalaka},
      title = {Evaluating of Simulating the Transportation of Electron in Intelligent Information Systems and High-Tech Applicants},
      journal = {Nuclear Science},
      volume = {4},
      number = {1},
      pages = {6-10},
      doi = {10.11648/j.ns.20190401.12},
      url = {https://doi.org/10.11648/j.ns.20190401.12},
      eprint = {https://download.sciencepg.com/pdf/10.11648.j.ns.20190401.12},
      abstract = {The interest to study electron transport in semiconductor devices at very high electric field has been increased in the last decades and assessment of Monte Carlo simulation of electron transport in ZnO diode in intelligent information systems is of high significance. The Monte Carlo method as applied to semiconductor transport is a simulation of the trajectories of individual Carriers as they move through a device under the influence of external forces and subject to random scattering events. Monte Carlo simulation is performed to study quasi-ballistic transport of electrons in n+nn+ ZnO diode. In this simulation, the spatial motion of the electrons is semi classical and the scattering mechanisms taken into account are those due to acoustic phonons, non-polar optical phonons, polar optical phonons and ionized impurities. The simulation results are reported for different temperatures and voltages. It is also found that the transient properties of ZnO-made diode are not much sensitive to environment temperature changes, and thus the use of this substance is highly recommended in manufacture of electronic equipment.},
     year = {2019}
    }
    

    Copy | Download

  • TY  - JOUR
    T1  - Evaluating of Simulating the Transportation of Electron in Intelligent Information Systems and High-Tech Applicants
    AU  - Afroditi Skafida
    AU  - Katherina Dalaka
    Y1  - 2019/07/09
    PY  - 2019
    N1  - https://doi.org/10.11648/j.ns.20190401.12
    DO  - 10.11648/j.ns.20190401.12
    T2  - Nuclear Science
    JF  - Nuclear Science
    JO  - Nuclear Science
    SP  - 6
    EP  - 10
    PB  - Science Publishing Group
    SN  - 2640-4346
    UR  - https://doi.org/10.11648/j.ns.20190401.12
    AB  - The interest to study electron transport in semiconductor devices at very high electric field has been increased in the last decades and assessment of Monte Carlo simulation of electron transport in ZnO diode in intelligent information systems is of high significance. The Monte Carlo method as applied to semiconductor transport is a simulation of the trajectories of individual Carriers as they move through a device under the influence of external forces and subject to random scattering events. Monte Carlo simulation is performed to study quasi-ballistic transport of electrons in n+nn+ ZnO diode. In this simulation, the spatial motion of the electrons is semi classical and the scattering mechanisms taken into account are those due to acoustic phonons, non-polar optical phonons, polar optical phonons and ionized impurities. The simulation results are reported for different temperatures and voltages. It is also found that the transient properties of ZnO-made diode are not much sensitive to environment temperature changes, and thus the use of this substance is highly recommended in manufacture of electronic equipment.
    VL  - 4
    IS  - 1
    ER  - 

    Copy | Download

  • Sections