Computer Aided Design-Based Band Diagram Development for High Performance Solar Cells
American Journal of Computer Science and Technology
Volume 1, Issue 3, September 2018, Pages: 55-62
Received: Nov. 3, 2018;
Accepted: Nov. 15, 2018;
Published: Dec. 26, 2018
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Hnin Lai Lai Aye, Department of Electronic Engineering, Yangon Technological University, Yangon, Republic of the Union of Myanmar
There are essentially different forms of solar cell panels that are used in either for domestic uses or industrial purposes depending on the semiconductor materials. Actually, there are enormous amount of semiconductor and these various types can be combined or adjust the composition of the material can form the new compound of semiconductor. In this paper, the basic concepts of semiconductors that are used for in all aspects of material science and optical devices are firstly described with both theoretical and mathematical approaches. The main objective of this research is to design and analyse the band diagram design of semiconductor materials which are used for high performance solar cells. This paper describes the fundamental theory of semiconductors, the properties analysis and band gap design of materials for solar cells. Firstly, as the physical properties play a vital role in semiconductor measurements, the properties such as effective mass of majority and minority carriers, the dielectric constants and energy band gaps are calculated. Depending on the specified semiconductor material, the required parameters and the mathematical calculation are performed based on the existing equations. Secondly, the optical properties and the characteristics curves of semiconductor materials are discussed. Numerical values of each parameter which are included in analysis are defined in order to achieve the current-voltage characteristic for specific solar cell and then these resultant values are predicted for the performance of solar cells. Finally, the energy band diagram and efficiency of semiconductor solar cells are presented. Therefore, this research is focused in analyzing the useful properties of semiconductor materials for solar cells. The computerized analyses have also mentioned in this paper.
Hnin Lai Lai Aye,
Computer Aided Design-Based Band Diagram Development for High Performance Solar Cells, American Journal of Computer Science and Technology.
Vol. 1, No. 3,
2018, pp. 55-62.
Copyright © 2018 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/
) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Mishra, U. and Singh, J. (2007). Semiconductor device physics and design. Springer Science & Business Media.
William J. Potscavage, J. Physics and Engineering of Organic Solar Cells. PhD paper, Georgia Institute of Technology.
Cho, P. E. E. (2007). Analysis of V-I characteristics and bandgap design for homojunction and heterojunction solar cells.
Knechtli, R., Loo, R. Y., and Kamath, G. S. (1984). Highefﬁciency GaAs solar cells. IEEE Transactions on electron devices, 31(5): 577–588.
Hwang, S.-T., Kim, S., Cheun, H., Lee, H., Lee, B., Hwang, T., Lee, S., Yoon, W., Lee, H.-M., and Park, B. Bandgap grading and Al 0.3 Ga 0.7 As heterojunction emitter for highly efﬁcient GaAs-based solar cells. 155: 264–272.
Cheong, J. S., Baharuddin, A. N. A. P., Ng, J. S., Krysa, A. B., and David, J. P. R. Absorption coefﬁcients in AlGaInP lattice-matched to GaAs. 164: 28 – 31.
Cheong, J. S., Ng, J. S., Krysa, A. B., Ong, J. S. L., and David, J. P. R. Determination of absorption coefﬁcients in AlInP lattice matched to GaAs. 48(40): 405101.
Neamen, D. A. Semiconductor Physics and Devices: Basic Principles. McGraw-Hill Education. Google-Books-ID: 2LwQPwAACAAJ.
NSM archive - physical properties of semiconductors.
Neudeck, G. W. MODULAR SERIES ON SOLID STATE DEVICES. page 229.
C. C. Katsidis, A. O. Ajagunna, and A. Georgakilas, “Optical characterization of free electron concentration in heteroepitaxial InN layers using Fourier transform infrared spectroscopy and a 2×2 transfer-matrix algebra”, JOURNAL OF APPLIED PHYSICS 113, 073502, 2013.
Yoshihiro Ishitani, “Theoretical and experimental study of the optical absorption at longitudinal phonon or phonon-plasmon coupling mode energy: An example of GaN”, Journal Of Applied Physics 112, 063531 (2012).
Yoshihiro Ishitani, Keisuke Hatta, Ken Morita and Bei Ma, “Dielectric absorption of s-polarized infrared light resonant to longitudinal optical phonon energy incident on lateral (0001) GaN/Ti stripe structures”, J. Phys. D: Appl. Phys. 48 (2015) 095103 (5pp).