Design of High-Performance 1-Bit Full Adder Cells Based on MOS-Type GNRFETs

Alireza Dehghan

doi:doi:10.11648/j.ijecec.20200601.11

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Design of High-Performance 1-Bit Full Adder Cells Based on MOS-Type GNRFETs

Alireza Dehghan

Published in International Journal of Electrical Components and Energy Conversion (Volume 6, Issue 1)

Received: 12 August 2020 Accepted: 26 August 2020 Published: 7 September 2020

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Abstract

In deep sub-micron technologies, conventional silicon-based transistors are faced main several problems related to the short-channel effects such as power dissipation, subthreshold leakage, and drain-induced barrier lowering (DIBL). Graphene nano-ribbon field-effect transistors (GNRFETs) have become a potential contender as a substitute for traditional silicon-based transistors in next generation nano-electronic devices. They exhibit fantastic properties such as high charge carrier mobility, mean free path of electrons, faster switching, and high ION/IOFF ratio. In order to prove the competences and superiority of these types of transistors, various circuits like full adder (FA) cells, which are the main building block of computational systems must be simulated and studied. This paper presents redesigning various 1-bit FA cells such as Complementary Metal-Oxide-Semiconductor (CMOS), Complementary Pass-Transistor Logic (CPL), Transmission-Gate (TG), Hybrid CMOS (HCMOS), and Transmission Function Adder (TFA) using MOS-GNRFET devices in 16nm technology node. Different HSPICE simulations are performed to obtain propagation delay, average power consumption, power-delay-product (PDP), and energy-delay-product (EDP) of FA cells and are compared with 16nm CMOS predictive technology model (PTM) at different supply voltages. The obtained results indicate that MOS-GNRFET based 1-bit FA cells have better performance than that of Si-CMOS one. The MOS-GNRFET based FA cells improve propagation delay and EDP at least 31.195% and 4.372%, respectively.

Published in	International Journal of Electrical Components and Energy Conversion (Volume 6, Issue 1)
DOI	10.11648/j.ijecec.20200601.11
Page(s)	1-6
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Full Adder, Graphene Nanoribbon Field-Effect Transistor (GNRFET), High-Performance, Metal-Oxide-Semiconductor (MOS)

References

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[5]	M. Gholipour, Y.-Y. Chen, A. Sangai, N. Masoumi, and D. Chen, "Analytical SPICE-compatible model of Schottky-barrier-type GNRFETs with performance analysis", IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 24, no. 2, pp. 650-663, 2016, https://doi.org/10.1109/TVLSI.2015.2406734.
[6]	M. Gholipour, Y.-Y. Chen, A. Sangai, and D. Chen, "Highly accurate SPICE-compatible modeling for single-and double-gate GNRFETs with studies on technology scaling", in Proceedings of the conference on Design, Automation & Test in Europe, p. p 1-6, 2014, https://doi.org/10.7873/DATE.2014.133.
[7]	S. Joshi and U. Albalawi, "Statistical Process Variation Analysis of Schottky-Barrier type GNRFET for RF Application", in 2017 International Conference on Current Trends in Computer, Electrical, Electronics and Communication (CTCEEC), pp. 1-6, 2017, https://doi.org/10.1109/CTCEEC.2017.8455156.
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[10]	Y.-Y. Chen, A. Rogachev, A. Sangai, G. Iannaccone, G. Fiori, and D. Chen, "A SPICE-compatible model of graphene nano-ribbon field-effect transistors enabling circuit-level delay and power analysis under process variation", in 2013 Design, Automation & Test in Europe Conference & Exhibition (DATE), pp. 1789-1794, 2013, https://doi.org/10.7873/DATE.2013.359.
[11]	Y.-W. Son, M. L. Cohen, and S. G. Louie, "Energy gaps in graphene nanoribbons", Physical review letters, vol. 97, no. 21, p. 216803, Nov. 2006, https://doi.org/10.1103/PhysRevLett.97.216803.
[12]	Y.-Y. Chen, A. Sangai, A. Rogachev, M. Gholipour, G. Iannaccone, G. Fiori, and D. Chen, "A SPICE-compatible model of MOS-type graphene nano-ribbon field-effect transistors enabling gate-and circuit-level delay and power analysis under process variation", IEEE Transactions on Nanotechnology, vol. 14, no. 6, pp. 1068-1082, 2015, https://doi.org/0.1109/TNANO.2015.2469647.
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APA Style

Alireza Dehghan. (2020). Design of High-Performance 1-Bit Full Adder Cells Based on MOS-Type GNRFETs. International Journal of Electrical Components and Energy Conversion, 6(1), 1-6. https://doi.org/10.11648/j.ijecec.20200601.11

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ACS Style

Alireza Dehghan. Design of High-Performance 1-Bit Full Adder Cells Based on MOS-Type GNRFETs. Int. J. Electr. Compon. Energy Convers. 2020, 6(1), 1-6. doi: 10.11648/j.ijecec.20200601.11

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AMA Style

Alireza Dehghan. Design of High-Performance 1-Bit Full Adder Cells Based on MOS-Type GNRFETs. Int J Electr Compon Energy Convers. 2020;6(1):1-6. doi: 10.11648/j.ijecec.20200601.11

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@article{10.11648/j.ijecec.20200601.11,
  author = {Alireza Dehghan},
  title = {Design of High-Performance 1-Bit Full Adder Cells Based on MOS-Type GNRFETs},
  journal = {International Journal of Electrical Components and Energy Conversion},
  volume = {6},
  number = {1},
  pages = {1-6},
  doi = {10.11648/j.ijecec.20200601.11},
  url = {https://doi.org/10.11648/j.ijecec.20200601.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijecec.20200601.11},
  abstract = {In deep sub-micron technologies, conventional silicon-based transistors are faced main several problems related to the short-channel effects such as power dissipation, subthreshold leakage, and drain-induced barrier lowering (DIBL). Graphene nano-ribbon field-effect transistors (GNRFETs) have become a potential contender as a substitute for traditional silicon-based transistors in next generation nano-electronic devices. They exhibit fantastic properties such as high charge carrier mobility, mean free path of electrons, faster switching, and high ION/IOFF ratio. In order to prove the competences and superiority of these types of transistors, various circuits like full adder (FA) cells, which are the main building block of computational systems must be simulated and studied. This paper presents redesigning various 1-bit FA cells such as Complementary Metal-Oxide-Semiconductor (CMOS), Complementary Pass-Transistor Logic (CPL), Transmission-Gate (TG), Hybrid CMOS (HCMOS), and Transmission Function Adder (TFA) using MOS-GNRFET devices in 16nm technology node. Different HSPICE simulations are performed to obtain propagation delay, average power consumption, power-delay-product (PDP), and energy-delay-product (EDP) of FA cells and are compared with 16nm CMOS predictive technology model (PTM) at different supply voltages. The obtained results indicate that MOS-GNRFET based 1-bit FA cells have better performance than that of Si-CMOS one. The MOS-GNRFET based FA cells improve propagation delay and EDP at least 31.195% and 4.372%, respectively.},
 year = {2020}
}

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TY  - JOUR
T1  - Design of High-Performance 1-Bit Full Adder Cells Based on MOS-Type GNRFETs
AU  - Alireza Dehghan
Y1  - 2020/09/07
PY  - 2020
N1  - https://doi.org/10.11648/j.ijecec.20200601.11
DO  - 10.11648/j.ijecec.20200601.11
T2  - International Journal of Electrical Components and Energy Conversion
JF  - International Journal of Electrical Components and Energy Conversion
JO  - International Journal of Electrical Components and Energy Conversion
SP  - 1
EP  - 6
PB  - Science Publishing Group
SN  - 2469-8059
UR  - https://doi.org/10.11648/j.ijecec.20200601.11
AB  - In deep sub-micron technologies, conventional silicon-based transistors are faced main several problems related to the short-channel effects such as power dissipation, subthreshold leakage, and drain-induced barrier lowering (DIBL). Graphene nano-ribbon field-effect transistors (GNRFETs) have become a potential contender as a substitute for traditional silicon-based transistors in next generation nano-electronic devices. They exhibit fantastic properties such as high charge carrier mobility, mean free path of electrons, faster switching, and high ION/IOFF ratio. In order to prove the competences and superiority of these types of transistors, various circuits like full adder (FA) cells, which are the main building block of computational systems must be simulated and studied. This paper presents redesigning various 1-bit FA cells such as Complementary Metal-Oxide-Semiconductor (CMOS), Complementary Pass-Transistor Logic (CPL), Transmission-Gate (TG), Hybrid CMOS (HCMOS), and Transmission Function Adder (TFA) using MOS-GNRFET devices in 16nm technology node. Different HSPICE simulations are performed to obtain propagation delay, average power consumption, power-delay-product (PDP), and energy-delay-product (EDP) of FA cells and are compared with 16nm CMOS predictive technology model (PTM) at different supply voltages. The obtained results indicate that MOS-GNRFET based 1-bit FA cells have better performance than that of Si-CMOS one. The MOS-GNRFET based FA cells improve propagation delay and EDP at least 31.195% and 4.372%, respectively.
VL  - 6
IS  - 1
ER  -

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Author Information

Alireza Dehghan

Electronic Engineering Department, Islamic Azad University, Bandarabbas, Iran

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APA Style

Alireza Dehghan. (2020). Design of High-Performance 1-Bit Full Adder Cells Based on MOS-Type GNRFETs. International Journal of Electrical Components and Energy Conversion, 6(1), 1-6. https://doi.org/10.11648/j.ijecec.20200601.11

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ACS Style

Alireza Dehghan. Design of High-Performance 1-Bit Full Adder Cells Based on MOS-Type GNRFETs. Int. J. Electr. Compon. Energy Convers. 2020, 6(1), 1-6. doi: 10.11648/j.ijecec.20200601.11

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AMA Style

Alireza Dehghan. Design of High-Performance 1-Bit Full Adder Cells Based on MOS-Type GNRFETs. Int J Electr Compon Energy Convers. 2020;6(1):1-6. doi: 10.11648/j.ijecec.20200601.11

Copy | Download

@article{10.11648/j.ijecec.20200601.11,
  author = {Alireza Dehghan},
  title = {Design of High-Performance 1-Bit Full Adder Cells Based on MOS-Type GNRFETs},
  journal = {International Journal of Electrical Components and Energy Conversion},
  volume = {6},
  number = {1},
  pages = {1-6},
  doi = {10.11648/j.ijecec.20200601.11},
  url = {https://doi.org/10.11648/j.ijecec.20200601.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijecec.20200601.11},
  abstract = {In deep sub-micron technologies, conventional silicon-based transistors are faced main several problems related to the short-channel effects such as power dissipation, subthreshold leakage, and drain-induced barrier lowering (DIBL). Graphene nano-ribbon field-effect transistors (GNRFETs) have become a potential contender as a substitute for traditional silicon-based transistors in next generation nano-electronic devices. They exhibit fantastic properties such as high charge carrier mobility, mean free path of electrons, faster switching, and high ION/IOFF ratio. In order to prove the competences and superiority of these types of transistors, various circuits like full adder (FA) cells, which are the main building block of computational systems must be simulated and studied. This paper presents redesigning various 1-bit FA cells such as Complementary Metal-Oxide-Semiconductor (CMOS), Complementary Pass-Transistor Logic (CPL), Transmission-Gate (TG), Hybrid CMOS (HCMOS), and Transmission Function Adder (TFA) using MOS-GNRFET devices in 16nm technology node. Different HSPICE simulations are performed to obtain propagation delay, average power consumption, power-delay-product (PDP), and energy-delay-product (EDP) of FA cells and are compared with 16nm CMOS predictive technology model (PTM) at different supply voltages. The obtained results indicate that MOS-GNRFET based 1-bit FA cells have better performance than that of Si-CMOS one. The MOS-GNRFET based FA cells improve propagation delay and EDP at least 31.195% and 4.372%, respectively.},
 year = {2020}
}

Copy | Download

TY  - JOUR
T1  - Design of High-Performance 1-Bit Full Adder Cells Based on MOS-Type GNRFETs
AU  - Alireza Dehghan
Y1  - 2020/09/07
PY  - 2020
N1  - https://doi.org/10.11648/j.ijecec.20200601.11
DO  - 10.11648/j.ijecec.20200601.11
T2  - International Journal of Electrical Components and Energy Conversion
JF  - International Journal of Electrical Components and Energy Conversion
JO  - International Journal of Electrical Components and Energy Conversion
SP  - 1
EP  - 6
PB  - Science Publishing Group
SN  - 2469-8059
UR  - https://doi.org/10.11648/j.ijecec.20200601.11
AB  - In deep sub-micron technologies, conventional silicon-based transistors are faced main several problems related to the short-channel effects such as power dissipation, subthreshold leakage, and drain-induced barrier lowering (DIBL). Graphene nano-ribbon field-effect transistors (GNRFETs) have become a potential contender as a substitute for traditional silicon-based transistors in next generation nano-electronic devices. They exhibit fantastic properties such as high charge carrier mobility, mean free path of electrons, faster switching, and high ION/IOFF ratio. In order to prove the competences and superiority of these types of transistors, various circuits like full adder (FA) cells, which are the main building block of computational systems must be simulated and studied. This paper presents redesigning various 1-bit FA cells such as Complementary Metal-Oxide-Semiconductor (CMOS), Complementary Pass-Transistor Logic (CPL), Transmission-Gate (TG), Hybrid CMOS (HCMOS), and Transmission Function Adder (TFA) using MOS-GNRFET devices in 16nm technology node. Different HSPICE simulations are performed to obtain propagation delay, average power consumption, power-delay-product (PDP), and energy-delay-product (EDP) of FA cells and are compared with 16nm CMOS predictive technology model (PTM) at different supply voltages. The obtained results indicate that MOS-GNRFET based 1-bit FA cells have better performance than that of Si-CMOS one. The MOS-GNRFET based FA cells improve propagation delay and EDP at least 31.195% and 4.372%, respectively.
VL  - 6
IS  - 1
ER  -

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