Memristor, a Nano-Scaled Element for the Computer Memory: A Mini-Review with Some New Results for an ac-Driven Memristor
Journal of Photonic Materials and Technology
Volume 1, Issue 2, September 2015, Pages: 27-32
Received: Jul. 6, 2015; Accepted: Jul. 19, 2015; Published: Jul. 20, 2015
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Authors
Elena Zhitlukhina, Dept. of Dynamical Properties of Complex Systems, Donetsk Institute for Physics and Engineering, National Academy of Sciences of Ukraine, Kyiv, Ukraine
Mikhail Belogolovskii, Lab. of Dynamics of Electronic Processes in Hybrid Structures, Institute for Metal Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine
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Abstract
In this paper, we give a short look at the concept of memristive nano-technology, its history, and actual state-of-the-art. It is expected that together with advanced light-driven data transfer technology, computer operation will change dramatically by memristors, a new kind of the computer memory, which is becoming a sustaining hotspot in fields of physics and electronics. This entry aims to familiarize scientists working in the field of photonics with the phenomenon of resistive switching in ac-driven memristors. In addition to already published results, we present our original interpretation of resistance changes in heterostructures based on complex oxides with oxygen vacancies as the most moveable component under applied electric fields.
Keywords
Electric Fields, Multilayered Structures, Resistive Switching, Memristive Technology, Complex Oxides, Oxygen Vacancies
To cite this article
Elena Zhitlukhina, Mikhail Belogolovskii, Memristor, a Nano-Scaled Element for the Computer Memory: A Mini-Review with Some New Results for an ac-Driven Memristor, Journal of Photonic Materials and Technology. Vol. 1, No. 2, 2015, pp. 27-32. doi: 10.11648/j.jmpt.20150102.12
References
[1]
The Machine: A new kind of computer - http://www.hpl.hp.com/research/systems-research/themachine/.
[2]
L. O. Chua, “Memristor: the missing circuit element”, IEEE Trans. on Circuit Theory, vol. 18, pp. 507-519, September 1971.
[3]
A. Sawa, “Resistive switching in transition metal oxides”, Mater. Today, vol. 11, pp. 28-36, June 2008.
[4]
G. Dearnaley, A. M. Stoneham, and D. V. Morgan D V. “Electrical phenomena in amorphous oxide films” Rep. Prog. Phys., vol. 33, pp. 1129-1191, September 1970.
[5]
L. F. Rybalchenko, V. V. Fisun, N. L. Bobrov, I. K. Yanson, A. V. Bondarenko, and A. M. Obolenskii. “Reversible effect of excess current recovery in Y (Ho)-Ba-Cu-О - normal metal point contacts at high voltages”, Fiz. Nizk. Temp., vol. 17, pp. 202-209, February 1991. (in Russian)
[6]
L. F. Rybalchenko, N. L. Bobrov, V. V. Fisun, I. K. Yanson, A. G. M. Jansen, and P. Wyder. “Reversible transitions in high-Tc cuprates based point contacts”, Eur. Phys. J. B, vol. 10, pp. 475-480, June 1999.
[7]
M. A. Belogolovskii, Yu. F. Revenko, A. Yu. Gerasimenko, V. M. Svistunov, E. Hatta, G. Plitnik, V. E. Shaternik, and E. M. Rudenko. “Inelastic electron tunneling across magnetically active interfaces in cuprate and manganite heterostructures modified by electromigration processes”, Low Temp. Phys., vol. 28, pp. 391-394, June 2002.
[8]
M. A. Belogolovskii. “Interface resistive switching effects in bulk manganites”, Cent. Eur. J. Phys., vol. 7, pp. 304-309, June 2009.
[9]
D. B. Strukov, G. S. Snider, D. R. Stewart, and R. Stanley Williams. “The missing memristor found”, Nature, vol. 453, pp. 80-83, May 2008.
[10]
M. J. Rozenberg, I. H. Inoue, and M. J. Sánchez. “Nonvolatile memory with multilevel switching: a basic model”, Phys. Rev. Lett., vol. 92, 178302-1 - 178302-4, April 2004.
[11]
A. Odagawa, H. Sato, I.H. Inoue, H. Akoh, M. Kawasaki, Y. Tokura, T. Kanno, and H. Adachi, "Colossal electroresistance of a Pr0.7Ca0.3MnO3 thin film at room temperature", Phys. Rev. B, vol. 70, pp. 224403-1 - 224403-4, December 2004.
[12]
D. S. Shang, Q. Wang, L. D. Chen, R. Dong, X. M. Li, and W. Q. Zhang. “Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag/La0. 7Ca0.3MnO3 /Pt heterostructures”, vol. 73, pp. 245427-2 – 245427-7, June 2006.
[13]
K. Terabe, T. Hasegawa, T. Nakayama, and M. Aono. “Quantized conductance atomic switch”, vol. 433, pp. 47-50, January 2005.
[14]
Y. B. Niam, J. Strozier, N. J. Wu, X. Chen, and A. Ignatiev. “Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides”, Phys Rev Lett., vol. 98, pp. 146403-1 – 146403-4, April 2007.
[15]
T. Fujii, M. Kawasaki, A. Sawa, Y. Kawazoe, H. Akoh, and Y. Tokura. “Electrical properties and colossal electroresistance of heteroepitaxial SrRuO3/SrTi1-xNbxO3 (0.0002 ≤ x ≤ 0.02) Schottky junctions”, Phys. Rev. B, vol. 75, pp. 165101-1 - 165101-7, April 2007.
[16]
S. H. Chang, S. C. Chae, S. B. Lee, C. Liu, T. W. Noh, J. S. Lee, B. Kahng, J. H. Jang, M. Y. Kim, D.-W. Kim, and C. U. Jung. “Effects of heat dissipation on unipolar resistance switching in Pt/NiO/Pt capacitors”, Appl. Phys. Lett., vol. 92, pp. 183507-1 - 183507-3, May 2008.
[17]
D. Lee, S. Baek, M. Ree, and O. Kim. “Unipolar resistive switching characteristic of semiconducting poly (o-anthranilic acid) film”, Electronics Lett. vol. 44, pp. 596-597, April 2008.
[18]
R. Waser and M. Aono. “Nanoionics-based resistive switching memories”, Nat. Mater., vol. 6, pp. 833-840, June 2007.
[19]
J. J. Yang, M. D. Pickett, X. Li, D. A. A .Ohlberg, D. R. Stewart, and R. Stanley Williams. “Memristive switching mechanism for metal/oxide/metal nanodevices”, Nat. Nanotechnol., vol. 3, pp. 429-433, June 2008.
[20]
X. Hu, D. Yang, and J. Hu. “Oxygen diffusion in YBa2Cu3O7-x and its potential applications“, in Diffusion and Reactivity in Solids, J. Y. Murdoch, Ed. New York: Nova Science Publ., 2007, pp. 227-241.
[21]
K. Yamamoto, B. M. Lairson, J. C. Bravman, and T.H. Geballe. “Oxidation kinetics of YBa2Cu3O7-х thin films in the presence of atomic oxygen and molecular oxygen by in-situ resistivity measurements”, J. Appl. Phys., vol. 69, pp. 7189-7201, June 1991.
[22]
T. Plecenik, M. Tomášek, M. Belogolovskii, M. Truchly, M. Gregor, J. Noskovič, M. Zahoran, T. Roch, I. Boylo, M. Španková, Š. Chromik, P. Kúš, and A. Plecenik. “Effect of crystallographic anisotropy on the resistance switching phenomenon in perovskites”, J. Appl. Phys., vol. 111, pp. 056106-1 - 056106-3, Match 2012.
[23]
H. Su and D. O. Welch. ‘The effects of space charge, dopants, and strain fields on surfaces and grain boundaries in YBCO compounds”, Supercond. Sci. Tech., vol. 18, pp. 24-34, January 2005.
[24]
G. I. Meijer. “Materials science. Who wins the nonvolatile memory race?”, Science, vol. 319, pp. 1625-1626, April 2008.
[25]
A. Plecenik, M. Tomasek, T. Plecenik, M.Truchly, J. Noskovic, M. Zahoran, T. Roch, M. Belogolovskii, M. Spankova, S. Chromik, and P. Kus. “Studies of resistance switching effects in metal/YBa2Cu3O7−x interface junctions”, Appl. Surf. Sci., vol. 256, pp. 5684–5687, July 2010.
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