Memristor, a Nano-Scaled Element for the Computer Memory: A Mini-Review with Some New Results for an ac-Driven Memristor
Journal of Photonic Materials and Technology
Volume 1, Issue 2, September 2015, Pages: 27-32
Received: Jul. 6, 2015; Accepted: Jul. 19, 2015; Published: Jul. 20, 2015
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Elena Zhitlukhina, Dept. of Dynamical Properties of Complex Systems, Donetsk Institute for Physics and Engineering, National Academy of Sciences of Ukraine, Kyiv, Ukraine
Mikhail Belogolovskii, Lab. of Dynamics of Electronic Processes in Hybrid Structures, Institute for Metal Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine
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In this paper, we give a short look at the concept of memristive nano-technology, its history, and actual state-of-the-art. It is expected that together with advanced light-driven data transfer technology, computer operation will change dramatically by memristors, a new kind of the computer memory, which is becoming a sustaining hotspot in fields of physics and electronics. This entry aims to familiarize scientists working in the field of photonics with the phenomenon of resistive switching in ac-driven memristors. In addition to already published results, we present our original interpretation of resistance changes in heterostructures based on complex oxides with oxygen vacancies as the most moveable component under applied electric fields.
Electric Fields, Multilayered Structures, Resistive Switching, Memristive Technology, Complex Oxides, Oxygen Vacancies
To cite this article
Elena Zhitlukhina, Mikhail Belogolovskii, Memristor, a Nano-Scaled Element for the Computer Memory: A Mini-Review with Some New Results for an ac-Driven Memristor, Journal of Photonic Materials and Technology. Vol. 1, No. 2, 2015, pp. 27-32. doi: 10.11648/j.jmpt.20150102.12
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