Structural and Optical Property of High Quality GaN Thin Film on Si with ZnO Buffer Layer
Journal of Photonic Materials and Technology
Volume 5, Issue 1, June 2019, Pages: 1-4
Received: Jan. 29, 2019;
Accepted: Mar. 17, 2019;
Published: Apr. 8, 2019
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Jianting He, College of Electrics and Electronics Engineering, Shandong University of Technology, Zibo, China
Shulian Yang, College of Electrics and Electronics Engineering, Shandong University of Technology, Zibo, China
Qinqin Wei, College of Electrics and Electronics Engineering, Shandong University of Technology, Zibo, China
A method was applied to improve the crystallization quality of GaN. ZnO thin films were deposited on n-Si (111) at 600°C by pulsed laser deposition (PLD), and GaN thin films were grown on Si or ZnO/ Si by R. F. magnetron sputtering system. Several GaN films were prepared with ZnO as buffer layer without annealing, with ZnO as buffer layer annealed at 850°C, 900°C and 950°C and with no buffer layer annealed at 950°C, respectively. The crystallization, optical property and morphology of all GaN films prepared were studied by X-ray diffraction (XRD), Fourier transform infrared spectrophotometer (FTIR), photoluminescence (PL) and scanning electron microscope (SEM). The results show that ZnO buffer layer plays an important role in improving the crystallization quality of GaN.
Structural and Optical Property of High Quality GaN Thin Film on Si with ZnO Buffer Layer, Journal of Photonic Materials and Technology.
Vol. 5, No. 1,
2019, pp. 1-4.
Copyright © 2019 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/
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