Room-Temperature Si-Compatible Red Light Emission from In2Se3-Decorated Silicon Nanowires
Nanoscience and Nanometrology
Volume 3, Issue 2, December 2017, Pages: 46-50
Received: Jun. 19, 2017; Accepted: Jul. 17, 2017; Published: Aug. 9, 2017
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Jinyou Xu, Key Laboratory of Advanced Micro/Nano Functional Materials, School of Physics and Electronic Engineering, Xinyang Normal University, Xinyang, The People’s Republic of China
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Next generation of Si-based nano-optoelectronic devices calls for monolithic integration of photonics with silicon. Here we report the synthesis of silicon nanowires with In2Se3 nanoflakes decorated by a one-step chemical vapor deposition under atmospheric pressure. These nanowires show pronounced red emission with wavelength in the range of 620-850 nm at room temperature under illumination of continuous wave laser. The strong emission originates from the photoluminescence of ultra-thin In2Se3 nanoflakes in view of the nanoscale footprint and atomically-thin thicknesses as well as high single-quality of the In2Se3 nanoflakes. This work demonstrated that nanoscale atomically-thin In2Se3 flakes can grow epitaxially on the surface of single-crystalline silicon nanowires and serves as strong red light emission centers for silicon nanowires. Therefore, these nanowires are promising to be used as a Si-compatible red light emission material for Si-based integrated nano-optoelectronic devices.
Silicon Nanowires, Optical Materials and Properties, Luminescence, In2Se3
To cite this article
Jinyou Xu, Room-Temperature Si-Compatible Red Light Emission from In2Se3-Decorated Silicon Nanowires, Nanoscience and Nanometrology. Vol. 3, No. 2, 2017, pp. 46-50. doi: 10.11648/j.nsnm.20170302.12
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Homewood, K. and Lourenco, M; Light from Si via dislocation loops. Mater. Today. 2005, 1, 34-39.
Rong, H; Liu, A; Jones, R; et al; An all-silicon Raman laser. Nature. 2005, 7023, 292-294.
Qu, Y. Q; Liao, L; Li, Y. J; et al; Electrically Conductive and Optically Active Porous Silicon Nanowires. Nano Lett. 2009, 12, 4539-4543.
Lourenço, M. A; Milosavljević, M; Gwilliam, R. M; et al; On the role of dislocation loops in silicon light emitting diodes. Appl. Phys. Lett. 2005, 20, 201105.
Zhou, W; Pan, A; Li, Y; et al; Controllable Fabrication of High-Quality 6-Fold Symmetry- Branched CdS Nanostructures with ZnS Nanowires as Templates. J. Phys. Chem. C. 2008, 25, 9253-9260.
Choi, H.-J; Shin, J. H; Suh, K; et al; Self-Organized Growth of Si/Silica/Er2Si2O7 Core−Shell Nanowire Heterostructures and their Luminescence. Nano Lett. 2005, 12, 2432-2437.
Xu, J; Li, H; Zhuang, X; et al; Synthesis and optical characterizations of chain-like Si@SiSe2 nanowire heterostructures. Nanoscale. 2012, 5, 1481-1485.
Boyraz, O. and Jalali, B; Demonstration of a silicon Raman laser. Opt. Express. 2004, 21, 5269-5273.
Espinola, R; Dadap, J; Osgood Jr, R; et al; Raman amplification in ultrasmall silicon-on-insulator wire waveguides. Opt. Express. 2004, 16, 3713-3718.
Claps, R; Dimitropoulos, D; Han, Y; et al; Observation of Raman emission in silicon waveguides at 1.54 μm. Opt. Express. 2002, 22, 1305-1313.
Xu, J; Guo, P; Zou, Z; et al; Eu-doped Si-SiO2 core–shell nanowires for Si-compatible red emission. Nanotechnology. 2016, 39, 395703.
Kenyon, A; Recent developments in rare-earth doped materials for optoelectronics. Prog. Quant. Electron. 2002, 4-5, 225-284.
Duan, X; Wang, C; Pan, A; et al; Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges. Chem. Soc. Rev. 2015.
Duan, X; Wang, C; Shaw, J. C; et al; Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions. Nat. Nanotechnol. 2014.
Li, H; Duan, X; Wu, X; et al; Growth of Alloy MoS2xSe2(1–x) Nanosheets with Fully Tunable Chemical Compositions and Optical Properties. J. Am. Chem. Soc. 2014, 10, 3756-3759.
Mak, K. F. and Shan, J; Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides. Nat Photon. 2016, 4, 216-226.
Sun, X. H; Yu, B; Ng, G; et al; III-VI compound semiconductor indium selenide (In2Se3) nanowires: Synthesis and characterization. Appl. Phys. Lett. 2006, 23, 233121.
Jacobs-Gedrim, R. B; Shanmugam, M; Jain, N; et al; Extraordinary Photoresponse in Two-Dimensional In2Se3 Nanosheets. ACS Nano. 2013, 1, 514-521.
Zhou, J; Zeng, Q; Lv, D; et al; Controlled Synthesis of High-Quality Monolayered α-In2Se3 via Physical Vapor Deposition. Nano Letters. 2015, 10, 6400-6405.
Lakshmikumar, S. and Rastogi, A; Selenization of Cu and In thin films for the preparation of selenide photo-absorber layers in solar cells using Se vapour source. Sol. Energy Mater. Sol. Cells. 1994, 1, 7-19.
Julien, C; Hatzikraniotis, E; Chevy, A; et al; Electrical behavior of Lithium intercalated layered In-Se compounds. Mater. Res. Bull. 1985, 3, 287-292.
Yu, B; Ju, S; Sun, X; et al; Indium selenide nanowire phase-change memory. Appl. Phys. Lett. 2007, 13, 133119-133119-133113.
Zhai, T. Y; Fang, X. S; Liao, M. Y; et al; Fabrication of High-Quality In2Se3 Nanowire Arrays toward High-Performance Visible-Light Photodetectors. ACS Nano. 2010, 3, 1596-1602.
Almeida, G; Dogan, S; Bertoni, G; et al; Colloidal Monolayer β-In2Se3 Nanosheets with High Photoresponsivity. J. Amer. Chem. Soc. 2017, 8, 3005-3011.
Lin, M; Wu, D; Zhou, Y; et al; Controlled Growth of Atomically Thin In2Se3 Flakes by van der Waals Epitaxy. J. Amer. Chem. Soc. 2013, 36, 13274-13277.
Peng, H. L; Xie, C; Schoen, D. T; et al; Large anisotropy of electrical properties in layer-structured In2Se3 nanowires. Nano Lett. 2008, 5, 1511-1516.
Ye, J; Soeda, S; Nakamura, Y; et al; Crystal Structures and Phase Transformation in In2Se3 Compound Semiconductor. Jpn. J. Appi. Phys. Vol. 1998, 8 Pt 1, 4264-4271.
Sánchez-Royo, J. F; Segura, A; Lang, O; et al; Optical and photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy. J. Appl. Phys. 2001, 6, 2818-2823.
Yang, M. D; Hu, C. H; Shen, J. L; et al; Hot Photoluminescence in gamma-In2Se3 Nanorods. Nanoscale Res. Lett. 2008, 11, 427-430.
Yang, M; Hu, C; Tong, S; et al; Structural and optical characteristics of γ-In2 Se3 Nanorods grown on Si substrates. J. Nanomater. 2011, 7.
Wagner, R. and Ellis, W; Vapor-Liquid-Solid Mechanism of Single Crystal Growth. Appl. Phys. Lett. 1964, 89-90.
Xu, J; Ma, L; Guo, P; et al; Room-Temperature Dual-Wavelength Lasing from Single-Nanoribbon Lateral Heterostructures. J. Amer. Chem. Soc. 2012, 30, 12394-12397.
Puthussery, J; Lan, A; Kosel, T. H; et al; Band-filling of solution-synthesized CdS nanowires. ACS Nano. 2008, 2, 357-367.
Protasenko, V. V; Hull, K. L. and Kuno, M; Disorder‐Induced Optical Heterogeneity in Single CdSe Nanowires. Adv. Mater. 2005, 24, 2942-2949.
Glennon, J. J; Tang, R; Buhro, W. E; et al; Synchronous photoluminescence intermittency (blinking) along whole semiconductor quantum wires. Nano Lett. 2007, 11, 3290-3295.
Schumacher, T; Giessen, H. and Lippitz, M; Ultrafast Spectroscopy of Quantum Confined States in a Single CdSe Nanowire. Nano Lett. 2013, 4, 1706-1710.
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