Fully Crystallized Silicon Nanostructured Film Prepared at Low Temperatures by Plasma-Enhanced Chemical Vapor Deposition
American Journal of Nanosciences
Volume 3, Issue 3, September 2017, Pages: 39-46
Received: May 14, 2017;
Accepted: Jun. 6, 2017;
Published: Jul. 14, 2017
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Dmitry Evgenyevich Milovzorov, FLUENS Technology Group Ltd., Moscow, Russian Federation
I studied the nanocrystalline silicon thin films by means of photoluminescent spectroscopy, Raman spectroscopy and Fourier-transformed infrared spectroscopy technique. The chemical bonding properties was studied by using the Fourier-transformed infrared spectroscopy in the range from500 cm-1 to 2300 cm-1. Spectral peak at wave number of 1100 cm-1 is related to the Si-O-Si bonding configuration. Hydrogenation of film can be estimated by using spectral lines at 2100 cm-1 and 2080 cm-1. The Si-O dipoles which are located into silicon film play great role because of electron affinity for oxygen. Photoluminescent (PL) properties are significant for the films which were made by using hydrogenation of silicon. Fourier-transformed infrared spectra of film’s absorption show the changes in chemicals in the film: from the oxygen incorporation into silicon to the elimination the Si-O bonding by adding the silicon tetra fluoride into electrochemical reactor, and increasing the Si-F density of bonds. The dissociation of SiF4 molecule causes the appearance of fluorine on the film surface, but the hydrogen atoms react with fluorine and excess fluorine is removed. By increase of SiF4 flow rate, the Si-O-Si bridges were etched by HF acid. The size effect in PL from nanocrystalline silicon film can be explained by means of statistical method. We suggested that the ƒ(x) is distribution function of crystallites in their sizes, θ(x) is a quantum efficiency of nanocrystals. Accordingly, the quantity of emitted hydrogenizednanocrystals by band-to-band radiative transitions is important to estimate the PL linear optical response. The processing of grown hydrogeneited silicon nanocrystalline film by annealing and etching the oxides results in preparation of fully crystallized silicon film for manufacturingthe photonic devices with significant quantum yield.
Dmitry Evgenyevich Milovzorov,
Fully Crystallized Silicon Nanostructured Film Prepared at Low Temperatures by Plasma-Enhanced Chemical Vapor Deposition, American Journal of Nanosciences.
Vol. 3, No. 3,
2017, pp. 39-46.
Copyright © 2017 Authors retain the copyright of this article.
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B. Sweryda-Krawiec, T. Cassagneau, J. H. Fendler, J.Phys. Chem.B, Vol.103, 1999, pp. 9524-9529.
L. Rego, S. G. Abuabara, S. Batista, The Journal of Chemical Physics, Vol.122, 2005, p.154709.
P. Wu, D. Lin, Growth mode in Si(100) epitaxy by low temperature chemical vapor deposition, Physical Review B, Vol. 57, No.19, 1998, pp. 12421-12427.
N. Wang, Y. Tang, Y. Zhang, C. Lee, S. Lee, Nucleation and growth of Si nanowires from silicon oxide, Physical Review B, Vol.58, No.24, 1998, pp. R16022-16026.
J. Bennet and L. Mattson, Introduction to surface roughness and scattering, Optical Society of America, Washington, D.C., 1989, pp.38-39.
D. Milovzorov, Surface States Silicon Crystalline Films Detected by Nonlinear Laser Spectroscopy, Norvegian Journal of Development of the International Science, 6, 2017, pp.74-82.
D. Milovzorov, K. B. Kim, M. Lisachenko, J. W. Seo, K. Y. Lee, and H. K. Chung, Microcrystalline Silicon for Thin Film Transistor, Proceedings of the 5th International Meeting on Information Display (IMID), Seoul, South Korea, July 19,Vol. II, 2005, pp.1320-1322.
D. Milovzorov, T. Inokuma, Y. Kurata, and S. Hasegawa, Relationship Between Structural and Optical Properties in Polycrystalline Silicon Films Prepared at Low Temperature by Plasma-Enhanced Chemical Vapor Deposition, Journal of the Electrochemical Society, 145, 1998, 3615-3620.
D. E. Milovzorov, A. M. Ali, T. Inokuma, Y. Kurata, T. Suzuki and S. Hasegawa, Optical properties of silicon nanocrystallites in polycrystalline silicon films prepared at low temperature by plasma-enhanced chemical vapor deposition, Thin Solid Films, Vol.382 No1&2, 2001, pp.47-55.
D. Milovzorov, Laser Assisted Photoprocesses in Nanostructured Silicon Films, Advanced Nanomaterials and Technologies for Energy Sector-NanoEnergy, 1, 2017, pp.21-33.