Broading Spectral Line Method for Determination Structural Parameters and Electronic Transitions in CdSe Artificial Atom
International Journal of Photochemistry and Photobiology
Volume 1, Issue 1, June 2017, Pages: 13-20
Received: Sep. 21, 2016;
Accepted: Jan. 12, 2017;
Published: Mar. 1, 2017
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Mohammed Anwar Batal, Department of Physics, College of Science, Aleppo University, Aleppo City, Syria
Kaesar Alyamani, Department of Physics, College of Science, Aleppo University, Aleppo City, Syria
Multi layers CdSe artificial atoms system prepared using Spin coating method. Using W-H method, which based on XRD Broading line profile, structural parameters of FTO/CdSe system were calculated. XRD spectrum reveal that CdSe nanoparticles have hexagonal structure, have high strain, show deposition layer on other do more stress and strain (Crystallization size (6.16 A◦), lattice constant C(7.16A◦), effective strain (0.07377 (lin–2 m–4)) between the nano crystals and dislocation (irregular) (26.443×1020 (lin–2 m–4)) were determined), which confirm more later by anther spectroscopic method. By doing fitting between experimental and theoretical absorption using Gaussian profile and Doppler broading line. Different electronic transitions were deduced and other broading curve were studying such as effect of particle size of artificial atoms, with doing more accurate fitting reveals existence of two intensities lines attributed to diffusion layer between FTO and CdSe artificial atoms.
Mohammed Anwar Batal,
Broading Spectral Line Method for Determination Structural Parameters and Electronic Transitions in CdSe Artificial Atom, International Journal of Photochemistry and Photobiology.
Vol. 1, No. 1,
2017, pp. 13-20.
Copyright © 2017 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/
) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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