Grain Boundary Effect on Efficiency of Polycrystalline Multilayer (SiNx/ P+N/SiOx/SiNx/ PECVD SiOx) Solar Cell
American Journal of Physics and Applications
Volume 1, Issue 2, September 2013, Pages: 33-37
Received: Oct. 4, 2013; Published: Oct. 30, 2013
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Author
Nisrine Benloucif, Department of electronic, Faculty of science and engineering, Constantine, Algeria
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Abstract
In this work, we are interested to the study of a solar cell based on polycrystalline silicon and its rear and front passivation using different structures, including the multilayered stack silicon oxide / SiNx / PECVD SiOx and silicon nitride for the front layer. We deduced from the study that the choice of (SiO2/SiNx/SiO2) rear passivation layer is optimal. We tried subsequently to optimize the optical gap on the basis of a good agreement between the values of fill factor and the efficiency. In addition, we also proposed a front passivation of the emitter by of silicon nitride layer. We have noted a marked improvement in conversion efficiency for high gas flow ratios R = Φ (NH3) / Φ (SiH4). After we have optimized the parameters of emitter and base layers, we have also contributed in the modeling of grain boundary current density in polysilicon. Electrical simulation shows the influence of grain boundaries surface recombination velocity on grain boundaries current density and the efficiency.
Keywords
Polycrystalline Silicon, Silicon Nitride, Solar Cell, Grain Boundary, Efficiency
To cite this article
Nisrine Benloucif, Grain Boundary Effect on Efficiency of Polycrystalline Multilayer (SiNx/ P+N/SiOx/SiNx/ PECVD SiOx) Solar Cell, American Journal of Physics and Applications. Vol. 1, No. 2, 2013, pp. 33-37. doi: 10.11648/j.ajpa.20130102.11
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