Highly (200)-Preferred Orientation TiN Thin Films Grown by DC Reactive Magnetron Sputtering
American Journal of Physics and Applications
Volume 5, Issue 3, May 2017, Pages: 41-45
Received: Jun. 27, 2017; Published: Jun. 27, 2017
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Authors
Li Haiyi, Department of Physics and Hydraulic Engineering, Gansu Normal University for Nationalities, Hezuo, P R China
Liu Yongzhi, Department of Physics and Hydraulic Engineering, Gansu Normal University for Nationalities, Hezuo, P R China
Gao Bingxiang, Department of Physics and Hydraulic Engineering, Gansu Normal University for Nationalities, Hezuo, P R China
Xie Liqiang, Department of Physics and Hydraulic Engineering, Gansu Normal University for Nationalities, Hezuo, P R China
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Abstract
Titanium nitride (TiNx) thin films were prepared on Si(111) substrates by DC reactive magnetron sputtering. The influence of chamber pressure on the lattice constants, grain size, surface morphologies, conductivity and visible-near infrared reflectance of TiNx thin films were investigated. It is shown that the main component of the thin films is cubic TiN with (200) preferred orientation. The resistivity of the TiN thin film increase along with the increase of the chamber pressure, whereas the lattice constants and average reflectance within near infrared range of the TiN thin film decrease gradually. For all the TiN films, there is a minimum reflectance around 455nm.
Keywords
TiN Thin Film, Magnetron Sputtering, Chamber Pressure, Lattice Constant, Optical Reflectance
To cite this article
Li Haiyi, Liu Yongzhi, Gao Bingxiang, Xie Liqiang, Highly (200)-Preferred Orientation TiN Thin Films Grown by DC Reactive Magnetron Sputtering, American Journal of Physics and Applications. Vol. 5, No. 3, 2017, pp. 41-45. doi: 10.11648/j.ajpa.20170503.12
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