The Density of States of the Two Dimensional Electron Gas in InAs/AlSb Quantum Well
American Journal of Physics and Applications
Volume 6, Issue 1, January 2018, Pages: 18-21
Received: Nov. 24, 2017; Accepted: Dec. 6, 2017; Published: Jan. 11, 2018
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Authors
Baymatov Paziljon Jamoldinovich, Department of Physics, Namangan State University, Namangan, Republic of Uzbekistan
Bahrom Toshmirza O’g’li Abdulazizov, Department of Physics, Namangan State University, Namangan, Republic of Uzbekistan
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Abstract
It is considered the possibility of determining the density of states of the two-dimensional electron gas as a function of total concentration ns on the basis of some experimental data. For this purpose it is used the known value of the effective mass at the Fermi level from the cyclotron resonance measurements and the number of quantized levels located below the Fermi level from the measurements of the Shubnikov-de Haas. The obtained density of states is compared with model calculation that takes into account the non-parabolic conduction band. The experimental data and model calculations correspond to the hetero structured quantum well InAs/AlSb with width of 15nm.
Keywords
Quantum Well, Kane Model, Subband Dispersion, InAs/AlSb Hetero Structure, Two-Dimensional Electron Gas, Density of States, Effective Mass
To cite this article
Baymatov Paziljon Jamoldinovich, Bahrom Toshmirza O’g’li Abdulazizov, The Density of States of the Two Dimensional Electron Gas in InAs/AlSb Quantum Well, American Journal of Physics and Applications. Vol. 6, No. 1, 2018, pp. 18-21. doi: 10.11648/j.ajpa.20180601.14
Copyright
Copyright © 2018 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
References
[1]
Shik, A. Y., Bakueva, L. G., Musikhin, S. F. and Rykov, S. A. (2001) Fizika nizkorazmernih system. SPb, Nauka, 160p. (in Russian).
[2]
M. J. Yang, P. J. Lin-Chung, R. J. Wagner, J. R. Waterman, W. J. Moore, B. V. Shanabrook. Far-infrared spectroscopy in strained AlSb/InAs/AlSb quantum wells. Semicond. Sci. Technol. 8, S129 (1993) [DOI:10.1088/0268-1242/8/1S/029].
[3]
C. Gauer, J. Scriba, A. Wixforth, J. P. Kotthaus, C. R. Bolognesi, C. Nguyen, B. Brar, H. Kroemer. Energy-dependent cyclotron mass in InAs/AlSb quantum wells. Semicond. Sci. Technol. 9, 1580 (1994) [DOI:10.1088/0268-1242/9/9/002].
[4]
R. J. Warburton, C. Gauer, A. Wixforth, J. P. Kotthaus, B. Brar, H. Kroemer. Intersubband resonances in InAs/AlSb quantum wells: Selection rules, matrix elements, and the depolarization field. Phys. Rev. B53, 7903(1996) [DOI:10.1103/PhysRevB.53.7903].
[5]
V. Ya. Aleshkin, V. I. Gavrilenko, A. V. Ikonnikov, Yu. G. Sadofyev, J. P. Bird, S. R. Jonhson, Y. -H. Zhang. A cyclotrone resonance in both doped and non-doped InAs/AlSb heterostructures with quantum wells. Fiz. Tekh. Poluprovodn. 39, 71-75(2005) (in Russian).
[6]
I. V. Kukushkin, S. V. Meshkov, and V. B. Timofeev, “Two-dimensional electron density of states in a transverse magnetic field,” Soviet Physics Uspekhi, vol. 31, no. 6, pp. 511–534, 1988. (in Russian).
[7]
V. Ya. Aleshkin, N. A. Bekin, M. N. Buyanova, B. N. Zvonkov, A. V. Murel. Investigation of the electron density of states in quantum wells and quantum dot arrays by C−V method. Fiz. Tekh. Poluprovodn. 33, 1246-1252 (1999) (in Russian).
[8]
N. V. Pavlov, G. G. Zegrya. Optical properties of hetero structures with deep quantum wells AlSb/InAs0.86Sb0.14/AlSb. Fiz. Tekh. Poluprovodn. 48, 1217-1227 (2014) (in Russian).
[9]
N. V. Pavlov, G. G. Zegrya. Influence of electrons and light holes energy spectrum nonparabolicity on optical properties of hetero structures with deep quantum wells AlSb/InAs0.86Sb0.14/AlSb. Fiz. Tekh. Poluprovodn. 49, 617-627 (2015) (in Russian).
[10]
Abdulazizov B. T., Baymatov P. J. The International Symposium “New Tendencies of Developing Fundamental and Applied Physics: Problems, Achievements, Prospectives”. November 10-11, 2016, Tashkent, Uzbekistan. PP. 76-77. http://www.ips2016.uz.
[11]
P. J. Baymatov, B. T. Abdulazizov. Concentration dependences of the electron effective mass, Fermi energy, and filling of subbands in doped InAs/AlSb quantum wells. Ukr. J. Phys. Vol. 62, No. 1, 46–50 (2017) [DOI:10.15407/ujpe62.01.0046].
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