Impurity State of Transition Group Elements in the Silicon Lattice in the Process of Their Interaction with Sulfur
American Journal of Physics and Applications
Volume 6, Issue 3, May 2018, Pages: 76-79
Received: Feb. 7, 2018;
Accepted: Mar. 21, 2018;
Published: Jun. 14, 2018
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Shaikrom Askarov, Department of Physics, Faculty of Mechanics, Tashkent State Technical University, Tashkent, Uzbekistan
Sharipov Bashirulla, Department of Physics, Faculty of Mechanics, Tashkent State Technical University, Tashkent, Uzbekistan
Srazhev Solizhon, Department of Condensed Matter Physics, Faculty of Physics, Samarqand State University, Samarqand, Uzbekistan
Toshboev Tuchi, Department of Condensed Matter Physics, Faculty of Physics, Samarqand State University, Samarqand, Uzbekistan
Salieva Shokhista, Department of Physics, Faculty of Mechanics, Tashkent State Technical University, Tashkent, Uzbekistan
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On the basis of comparative analysis of electrical properties of silicon doped with sulfur and nickel respectively at temperature range of 1000-1250°C in 50°C increments and after their subsequent thermal annealing at temperature range of 400-950°C together with control samples of silicon doped with sulfur and nickel, it was revealed that impurity centers of sulfur and nickel do not interact with each other in the matrix of silicon. The absence of such interaction is possibly due to the fact that the electronic configuration of the impurity centers of nickel in the crystal lattice of silicon turns out to be in the filled 3d10 state, which gives it the character of an inert gas. In view of the absence of interaction of sulfur and nickel in silicon, it is concluded that electrically neutral chemically bound complexes in silicon are formed between sulfur substitution centers and centers of transition metal atoms.
Silicon, Electrically Neutral Chemically Bound Complexes, Impurity Centers, Sulfur, Nickel, Transition Metals
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Impurity State of Transition Group Elements in the Silicon Lattice in the Process of Their Interaction with Sulfur, American Journal of Physics and Applications.
Vol. 6, No. 3,
2018, pp. 76-79.
Copyright © 2018 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/
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MK Bakhadyrkhanov, Sh. I. Askarov, N. Norkulov, FIT, 21.1456 (1987).
M. K. Bakhadirxanov, Sh. I. Askarov, N. Norkulov, Phus. Stat. Sol. (A), 142.339 (1994).
M. K. Bahadyrhanov, Sh. I. Askarov, N. Norkulov, A. Hamidov, Heorganicheskiematerialy, 32, 15 (1996).
M. Yoshida, K. Saito, Appl, Phys., Japan, 6,573 (1967).
M. K. Bahadyrhanov, S. Zaynobidinov, A. T. Teshaboev, M. A. Hodzhaeva, FTP, 10.1001 (1976).
M. K. Bahadyrkhanov, S. Zainobidinov, FIT, 12,683 (1978).
G. Wudbury, J. Ludwig, Sat. articles: Electron spin resonance in semiconductors. IL, M. (1968).
M. Steger, A. Yang, MLWThewalt, M. Kardona, H. Riemann, NVAbrosimov, MFChurbanov, AVGusev, ADBulanov, IDKovalev, AKKalliteevskii, ONGodisov, P. Becker, HJPohe , EEHaller, JWAger, III. Phus. Rev. B, 80,115204 (2009).
Yu. A. Astrov, L. M. Portsel, A. L. Lodygin, V. B. Shuman Semicond. Sci. Tehnol. 26,055.021 (2011).
V. B. Shuman, A. A. Mahova, Yu. Ayu Astrov, Ayu My Ivanov, A, N. Lodygin, FTP, 46.993, (2012).