American Journal of Physics and Applications

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Studies on the Effective Physical Parameters for Chirp Reduction in Optical Injection Locked Semiconductor Lasers

Received: 5 March 2014    Accepted:     Published: 30 March 2014
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Abstract

In optical injection locking, the light from one laser (master laser)is injected into another laser slave laser. The injected light causes changes in the slave laser characteristics, and it can lock the slave laser lasing frequency to the ML lasingfrequency. The locking characteristics are determined by theamount of injected power and thefrequency difference between the master laser and slave laser.In this paper, the chirp of injection-locked semiconductor lasers has been theoretically investigated. First, chirpcharacteristics of semiconductor lasers are described. The chirp to power ratio has been calculated with including opticalinjection effect in lasers rate equation. Then, the effects of phase difference between master and slave laser and modulation frequency on chirp to power ratio are evaluated. The results of calculations show that the effect of phasedifference can be neglected, but optical injection, line width enhancement factor, and detuningfrequency have an effective role in chirp reduction of semiconductor lasers.

DOI 10.11648/j.ajpa.20140202.13
Published in American Journal of Physics and Applications (Volume 2, Issue 2, March 2014)
Page(s) 56-60
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This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

Injection-Locked, Chirp, Semiconductor Lasers

References
[1] J. M. Liu, H. F. Chen, X. J. Meng, and T. B. Simpson, “Modulation bandwidth, noise, and stability of a semiconductor laser subject to strong injection locking,” IEEE Photon. Technol. Lett., vol. 9, pp. 1325–1327,Oct. 1997.
[2] V. Annovazzi-Lodi, A. Scire, M. Sorel, and S. Donati, “Dynamic behavior and locking of a semiconductor laser subjected to external injection,” IEEE J. Quantum Electron., vol. 34, pp. 2350–2357, Dec. 1998.
[3] X. Meng, T. Chau, and M. C. Wu, “Experimental demonstration of modulation bandwidth enhancement in distributed feedback lasers with external light injection,” Electron. Lett., vol. 34, pp. 2031–2032, Oct. 1998.
[4] W. E. Lamb, ‘‘Theory of an optical maser,’’ Phys. Rev., 134(6A), 1429–1450, 1964.
[5] R. Lang, ‘‘Injection locking properties of a semiconductor laser,’’ IEEE J. Quantum Electron., QE-18,976–83, 1982.
[6] A. Murakami, K. Kawashima, and K. Atsuki, ‘‘Cavity resonance shift and bandwidth enhancement insemiconductor lasers with strong light injection,’’ IEEE J. Quantum Electron.39, 1196–204, 2003.
[7] T. L. Koch, &J. E.Bowers, Nature of wavelength chirping in directly modulated semiconductorlasers. Electron.Lett. 20, 1038-1040, 1984
[8] F.Koyama, &Y.Suematsu, Analysis of dynamic spectral width of dynamic-single-mode (DSM)lasers and related transmission bandwidth of single-mode fibers. IEEE J. Quantum Electron. QE-21, 292-297, 1985
[9] R. A. Linke, Modulation induced transient chirping in single frequency lasers. IEEE J. QuantumElectron. QE-21, 593-597, 1985
[10] T. L. Koch and R. A. Linke, “Effect of nonlinear gain reduction on semiconductor laser wavelengthchirping” Appl. Phys. Lett. 48, 613-615, 1986
[11] R. S. Tucker, "High-speed modulation of semiconductor lasers," J. Lightwave Technol. 3, 1180-1192,1985.
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  • APA Style

    S. N. Hosseinimotlagh, M. Nikravesh, H. Molaei, M. Pezeshkian. (2014). Studies on the Effective Physical Parameters for Chirp Reduction in Optical Injection Locked Semiconductor Lasers. American Journal of Physics and Applications, 2(2), 56-60. https://doi.org/10.11648/j.ajpa.20140202.13

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    ACS Style

    S. N. Hosseinimotlagh; M. Nikravesh; H. Molaei; M. Pezeshkian. Studies on the Effective Physical Parameters for Chirp Reduction in Optical Injection Locked Semiconductor Lasers. Am. J. Phys. Appl. 2014, 2(2), 56-60. doi: 10.11648/j.ajpa.20140202.13

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    AMA Style

    S. N. Hosseinimotlagh, M. Nikravesh, H. Molaei, M. Pezeshkian. Studies on the Effective Physical Parameters for Chirp Reduction in Optical Injection Locked Semiconductor Lasers. Am J Phys Appl. 2014;2(2):56-60. doi: 10.11648/j.ajpa.20140202.13

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  • @article{10.11648/j.ajpa.20140202.13,
      author = {S. N. Hosseinimotlagh and M. Nikravesh and H. Molaei and M. Pezeshkian},
      title = {Studies on the Effective Physical Parameters for Chirp Reduction in Optical Injection Locked Semiconductor Lasers},
      journal = {American Journal of Physics and Applications},
      volume = {2},
      number = {2},
      pages = {56-60},
      doi = {10.11648/j.ajpa.20140202.13},
      url = {https://doi.org/10.11648/j.ajpa.20140202.13},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajpa.20140202.13},
      abstract = {In optical injection locking, the light from one laser (master laser)is injected into another laser slave laser. The injected light causes changes in the slave laser characteristics, and it can lock the slave laser lasing frequency to the ML lasingfrequency. The locking characteristics are determined by theamount of injected power and thefrequency difference between the master laser and slave laser.In this paper, the chirp of injection-locked semiconductor lasers has been theoretically investigated. First, chirpcharacteristics of semiconductor lasers are described. The chirp to power ratio has been calculated with including opticalinjection effect in lasers rate equation. Then, the effects of phase difference between master and slave laser and modulation frequency on chirp to power ratio are evaluated. The results of calculations show that the effect of phasedifference can be neglected, but optical injection, line width enhancement factor, and detuningfrequency have an effective role in chirp reduction of semiconductor lasers.},
     year = {2014}
    }
    

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  • TY  - JOUR
    T1  - Studies on the Effective Physical Parameters for Chirp Reduction in Optical Injection Locked Semiconductor Lasers
    AU  - S. N. Hosseinimotlagh
    AU  - M. Nikravesh
    AU  - H. Molaei
    AU  - M. Pezeshkian
    Y1  - 2014/03/30
    PY  - 2014
    N1  - https://doi.org/10.11648/j.ajpa.20140202.13
    DO  - 10.11648/j.ajpa.20140202.13
    T2  - American Journal of Physics and Applications
    JF  - American Journal of Physics and Applications
    JO  - American Journal of Physics and Applications
    SP  - 56
    EP  - 60
    PB  - Science Publishing Group
    SN  - 2330-4308
    UR  - https://doi.org/10.11648/j.ajpa.20140202.13
    AB  - In optical injection locking, the light from one laser (master laser)is injected into another laser slave laser. The injected light causes changes in the slave laser characteristics, and it can lock the slave laser lasing frequency to the ML lasingfrequency. The locking characteristics are determined by theamount of injected power and thefrequency difference between the master laser and slave laser.In this paper, the chirp of injection-locked semiconductor lasers has been theoretically investigated. First, chirpcharacteristics of semiconductor lasers are described. The chirp to power ratio has been calculated with including opticalinjection effect in lasers rate equation. Then, the effects of phase difference between master and slave laser and modulation frequency on chirp to power ratio are evaluated. The results of calculations show that the effect of phasedifference can be neglected, but optical injection, line width enhancement factor, and detuningfrequency have an effective role in chirp reduction of semiconductor lasers.
    VL  - 2
    IS  - 2
    ER  - 

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Author Information
  • Department of Physics, Colleges of Sciences, Islamic Azad University of Shiraz, Shiraz, Iran

  • Department of Physics, Science and Research Branch,Islamic Azad University,Fars,Iran

  • Department of Physics, Payam Noor University, Shiraz, Iran

  • Department of Physics, Payam Noor University, Shiraz, Iran

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