Send your promotional news to: email@example.com
Extending semiconductor devices to new compounds has produced great benefits to human life, as exemplified by modern optoelectronic and high-speed electronic devices for communications attained by Zinc Oxide, Blue LED etc. Engineers use a blue LED to excite some kind of fluorescent chemical in the bulb. That converts the blue light to white light. To harvest these advantages in real devices, a reliable technique for fabricating p-type doping needs to be established. Zinc oxide has substantial advantages including large exciton binding energy, as demonstrated by efficient excitonic lasing on optical excitation.
In a recent paper by author HLA MYO TUN, the optical properties of undoped Zinc Oxide were observed by experimenting with various substrate temperatures with Mist Chemical Vapor Deposition (Mist-CVD) technique. The observation from optimal values for crystal growth and XRD θ-2θ single peak at m-plane Zinc Oxide could be supported to implement the blue emission layer of Blue LEDs.
Characterizations for undoped Zinc Oxide were performed by Scanning Electron Microscope (SEM), He-Cd Laser for Photoluminescence Measurement, X-ray Diffraction (XRD) θ-2θ and film thickness measurement in Oxide Semiconductor Device Laboratory.
In this paper, HLA MYO TUN shows the performance and single crystalline properties for the crystal growth of undoped Zinc Oxide to use in blue emission layer. In these experiments, the Mist-CVD system is unsophisticated one. The SEM spectra were proved the crystal growth quality for smooth grain boundary. Photoluminescence Measurement could also be confirmed the ratio of near band edge emission and defect emission region for crystal quality. From the PL measurement, weak near-band-edge (NBE) emission peak was observed at 3.26eV while the deep level emissions are very strong for crystal growth. XRD θ-2θ single peak at m-plane Zinc Oxide was mentioned the optimum condition from the different substrate temperatures. The film thickness measurements were verified the smoothness of crystal growth on undoped Zinc Oxide thin film.
According to this experiment, the optimum value for Mist CVD techniques of un-doped Zinc Oxide with m-plane sapphire is substrate temperature of 600 °C with sample grown with the carrier gas flow rate of 8 L/min. A lot of experiments for proving the optical properties of Zinc Oxide shall be completed by changing the substrate temperatures or changing the different flow rate of carrier gas were confirmed the crystal growth of Zinc Oxide layer for blue emission layer of blue LEDs.
HLA MYO TUN, Associate Professor, Department of Electronic Engineering, Mandalay Technological University, Patheingyi 5071, Mandalay Region, Republic of the Union of Myanmar.