Transition metal dichalcogenides (TMDs) are the important class of 2D nanoscale materials with molecular formula MX2 where M is transition metal (Mo, W) and X is chalcogen (element of group 16). Using combination of above chemists has prepared several materials. TMDs monolayer such as MoS2, WS2, MoSe2, MoTe2, have direct band gap. Application point of view MoS2 is the most studied materials in the class of TMDs because of its versatile applications. TMDs exhibit unique properties such as direct band gap, electronic and mechanical, two dimensional layered materials, etc. Due to above properties TMDs become promising materials for energy applications such as hydrogen evolution reaction, oxygen evolution reaction, oxygen reduction reaction, photocatalysis, etc.
In this issue we will focus on the fundamental nature, their nucleation and growth, optimal growth conditions, and heterostructures with other layered materials. In addition to this the papers will be accepted on applications of TMDs in energy applications such as hydrogen evolution reaction, oxygen evolution reaction, oxygen reduction reaction, etc. As this is the very vast branch in material science maximum author might be interested in publishing their research article in this field.
This special issue will be the opportunity for the peoples working on the broad area such as materials science.

Aims and Scope:

1. Transition metal dichalcogenides
2. 2D materials
3. Semiconductor
4. Hydrogen evolution reaction
5. Photocatalysis
6. Energy materials