Department of Materials Science and Engineering, Yonsei University
Seoul, South Korea
Guidelines for Submission
Manuscripts can be submitted until the expiry of the deadline. Submissions must be previously unpublished and may not be under consideration elsewhere.
Papers should be formatted according to the guidelines for authors (see: http://www.sciencepublishinggroup.com/journal/guideforauthors?journalid=226). By submitting your manuscripts to the special issue, you are acknowledging that you accept the rules established for publication of manuscripts, including agreement to pay the Article Processing Charges for the manuscripts. Manuscripts should be submitted electronically through the online manuscript submission system at http://www.sciencepublishinggroup.com/login. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal and will be listed together on the special issue website.
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Semiconductor quantum dots (QDs) exhibit diverse opto-electronic properties for multi-task applications which can be stimulated by spatial control distribution of their chemical composition. The tendency to manipulate particle size and structure of QDs have propelled nanotechnology to the forefront of different innovative research and development. The advances provide solutions to many problems with promises of almost miraculous results and achievements. A notable technique to resolve uncertainties confronting the development of solid state materials is the tunability of QDs by controlling their physical, chemical, electrical and optical properties. The unique opto-electronic properties of QDs have opened door to innovative research in solar cell, light emitting diode, biological labeling, laser and communication devices. Vying to meet the increasing demand for QDs requires a clear understanding of the surface circumscription of the surface particles which necessitates for the development of unique processing methods to enhance their optoelectronic properties at low temperature. This will circumvent risk associated with inhalation of toxic materials at high temperature synthesis as well as the blowout of synthesis vessel.