Oil and Natural Gas Corporation Limited,
Ahmedabad, Gujarat, India
Dr. Pallav Gupta
Department of Mechanical Engineering, Amity School of Engineering and Technology, Amity University
Noida, Uttar Pradesh, India
Dr. Abhishek Juyal
Department of Physics, Indian Institute of Technology Kanpur
Kanpur, Uttar Pradesh, India
Dr. Vinod Kumar Dwivedi
Materials Science Programme, Indian Institute of Technology Kanpur
Kanpur, Uttar Pradesh, India
Dr. Amit Rajput
Department of Chemistry, GD Goenka University
Gurugram, Haryana, India
Dr. Gyanendra Kumar
Indian Institute of Technology Roorkee
Roorkee, Uttrakhand, India
Guidelines for Submission
Manuscripts can be submitted until the expiry of the deadline. Submissions must be previously unpublished and may not be under consideration elsewhere.
Papers should be formatted according to the guidelines for authors (see: http://www.sciencepublishinggroup.com/journal/guideforauthors?journalid=226). By submitting your manuscripts to the special issue, you are acknowledging that you accept the rules established for publication of manuscripts, including agreement to pay the Article Processing Charges for the manuscripts. Manuscripts should be submitted electronically through the online manuscript submission system at http://www.sciencepublishinggroup.com/login. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal and will be listed together on the special issue website.
The special issue currently is open for paper submission. Potential authors are humbly requested to submit an electronic copy of their complete manuscript by clicking here.
Please download to know all details of the Special Issue
In this special issue, we would like to invite manuscripts based on recent advances in ferroelectric materials at nanoscale. The nanoscale ferroelectricity has wide applications in memory devices at much lower power consumption compared to their magnetism based counterparts. It includes the synthesis of new ferroelectric materials either in thin film structures, or nanoparticles, nanomaterials etc. which may possess sharp ferroelectric switching at low coercive electric fields (preferably less than few hundred kV). The ferroelectrics based on complex oxides will be preferred as they are robust in ambient conditions for application prospectus, however, other innovative class of materials will also be welcomed. The objective of this issue is to address the recent trends in- (1) ferroelectric material synthesis and characterization, (2) to explore the possibility of their application in electronic device manufacturing industry, (3) understanding their physics, switching properties etc., (4) durability, robustness etc. We hope, with this aim, the readers will get a comprehensive overview of the opportunities and challenges of electric current driven memory devices and their future prospects.