American Journal of Nano Research and Applications

Special Issue

Physical Processes in Granulated Semiconductors

  • Submission Deadline: 20 May 2020
  • Status: Submission Closed
  • Lead Guest Editor: Lutfiddin Olimov
About This Special Issue
In today is world, semiconductor granular materials play an important role in the intensive development of the semiconductor physics industry. The functional and physical properties of such semiconductors increase the ability to create semiconductor devices, solar cells, thermoelements and integrated circuits based on micro- and nano-sized semiconductors. In recent years, the physical properties of granular semiconductors have been studied under specific conditions; in particular, the mechanisms of the manifestation of impurity thermal-voltaic effects have been extensively studied. According to the review of the literature, the manifestation of these effects depends on impurity states or surface defects, in the volume of a granular semiconductor and on the temperature difference. However, today the influence of the structure on the formation of electron-hole pairs and the transfer of charge carriers in granular semiconductors is one of the most unsolved problems. To be more precise, where electron-hole pairs formed? In the area between the borders of the granule or, in the volume of the granule? In addition, in which area does the charge transfer take place? Problems of creating thermoelectric materials based on granulated semiconductors. Promising plans in this area and more. The study of such physical processes in the structure of granules is one of the most important scientific and technical problems.
Aims and Scope:
  1. Semiconductor granular materials
  2. Thermoelements
  3. Micro- and nano-sized semiconductors
  4. Influence of the structure on the formation of electron-hole pairs and the transfer of charge carriers in granular semiconductors
  5. Where electron-hole pairs
  6. Problems of creating thermoelectric materials based on granulated semiconductors
Lead Guest Editor
  • Lutfiddin Olimov

    Andijan Machine Building Institute, Andijan, Uzbekistan