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The Effects of the Angle of Incidence and Gallium Doping Level on the Performance of a CIGS Solar Cell Studied Under Dynamic Frequency Under Monochromatic Illumination

Received: 4 January 2026     Accepted: 19 January 2026     Published: 31 January 2026
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Abstract

This article presents a model for studying a basic CIGS solar cell in dynamic frequency mode under monochromatic illumination. The study begins by solving the differential equation that highlights the expression of minority carrier density, followed by those of photocurrent density, photovoltage, short-circuit photocurrent density, and open-circuit photovoltage. This work finalizes the identification and study of the expressions for the shape factor, power, and conversion efficiency of the photovoltaic cell. The study of the dynamic impedance of the basic CIGS solar cell using Bode and Nyquist diagrams is also developed in this work. Thus, we observe that an increase in the angle of incidence tends to decrease the power of the photovoltaic cell, the form factor, and the conversion efficiency. On the other hand, increasing the gallium doping rate tends to improve the cell's performance. Furthermore, the results obtained from the impedance study show the existence of two specific pulsation zones. The first zone [0 rad⁄s; 3.16.107 rad⁄s] where the modulus is a constant; this is the static regime. The second zone ]3.16.107 rad⁄s; 108 rad⁄s [where the modulus increases; this is the dynamic regime. An increase in the angle of incidence with the dynamic impedance modulus is observed. Furthermore, the variation in the angle of incidence has no effect on the resonance frequency or phase. Furthermore, increasing the gallium doping level increases the dynamic resistance modulus. Subsequently, a slight decrease in the impedance phase is observed, synonymous with fluctuations in the pulse limiting the phase shift effects between the signal and the carriers produced. Finally, the Bode and Nyquist representations of the dynamic impedance show that inductive effects remain dominant.

Published in American Journal of Science, Engineering and Technology (Volume 11, Issue 1)
DOI 10.11648/j.ajset.20261101.11
Page(s) 1-9
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2026. Published by Science Publishing Group

Keywords

CIGS, Frequency Modulation, Incidence Angle, Gallium Doping, Bode Diagram, Nyquist Diagram

References
[1] I. Repins, M. A. Contreras, B. Egass, C. DeHart, J. Scharf, C. L. Perkins, B. To, R. Noufi, Prog. Photovoltaics 16 (2008) 235.
[2] Gerome Sambou, Alain Kassine Ehemba, Mouhamadou Mamour Soce, Amadou Diao, Moustapha Dieng «Frequency Modulation Study of a Monofacial Solar Cells Based on Copper Indium and Gallium Diselenide (CIGS) under Monochromatic Illumination: Influence of Incidence Angle and Gallium Doping» American Journal of Materials Science and Engineering, 2018, Vol. 6, No. 1, 7-11;
[3] Gérome Sambou, Amadou Diao, Jean Jude Domingo, Djimba Niane, Moustapha Dieng «Study of the Diffusion Capacity of a CIGS-based Solar Cell in Dynamic Frequency Regime Under Monochromatic Illumination: Effect of Incidence Angle and Gallium Doping Rate» American Journal of Energy Engineering 2018; 6(4): 50-56;
[4] N. Honma and C. Munakata, «Sample thickness dependence of minority carrier lifetimes measured using an ac photovoltaic method», Japan. J. Appl. Phys. 26,(1987) 2033-6.
[5] A. Dieng, I. Zerbo, M. Wade, A. S. Maiga et G. Sisoko, «Three-dimensional study of a polycrystalline silicon solar cell: the influence of the applied magnetic field on the elctrical parameters», Semicond. Sci. Technol. 26, (2011) pp: 5023-5032.
[6] J. N. Hollenhorst et G. Hasnain, «Frequency dependent whole diffusion in InGaAs double heterostructure» Appl. Phys. Lett, 65(15): (1995) 2203-2205.
[7] F. Ahmed et S. Garg, «simultaneous determination of diffusion length, lifetime and diffusion constant of minority carrier using a modulated beam» International Atomic Energy Agency. International centre for theorical physics. Internal report IC/86/129, 1987.
[8] J. Dugas, «3D modelling of a reverse cell made with improved multicrystalline silicon wafers». Solar Energy Materials and Solar Cells Volume 32. Issue 1, (January 1994). Pages 71-88.
[9] T. Flohr et R. Helbig, «Determination of minority-carrier lifetime and surface recombination velocity by Optical-Beam-Iduced-Current measurements at different light wavelengths» J. Appl. Phys. Vol. 66(7), (1989) pp 3060-3065.
[10] Sissoko, G., Museruka, C., Corréa, A., Gaye, I. and Ndiaye, A. L. (1996) Light Spectral Effect on Recombination Parameters of Silicon Solar Cell. World Renewable Energy Congress, Part III, 1487-1490.
[11] Morales-Acevedo «Effective absorption coefficient for graded band-gap semiconductors and the expected photocurrent density in solar cells».
[12] P. D. Paulson, R. W. Birkmire, and W. N. Shafarman. Optical characterization of Cu(In,Ga)Se2 alloy thin films by spectroscopic ellipsometry. Journal of Applied Physics, 94(2): 879, 2003.
[13] LATHI, BHAGWANDAS PANNALAL “Signals, systems and controls” Intext Educational Publisher, New York, 1973-1974.
[14] D. CHENVIDHYA, K. KIRTIKARA, C. JIVACATE. “Solar Energy Materials and Solar Cells” 80(2003) 459-464.
[15] R. ANIL KUMAR, M. S. SURESH AND J. NAGARAJU IEEE “Measurement of AC parameters of Gallium Arsenide (GaAs/Ge) solar cell by impedance spectroscopy”, IEEE Transactions on Electron Devices, Vol. 48, No. 9, pp 2177-2179, September 2001.
[16] Sunghun Jung, SeJin Ahn, Jae Ho Yun, Jihye Gwak, Donghwan Kim, and Kyun ghoon Yoon. Effects of Ga contents on properties of CIGS thin films and solar cells fabricated by co-evaporation technique. Current Applied Physics, 10(4): 990–996, July 2010.
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    Sambou, G., Wade, I., Diedhiou, A., Diallo, K., Dieng, M. (2026). The Effects of the Angle of Incidence and Gallium Doping Level on the Performance of a CIGS Solar Cell Studied Under Dynamic Frequency Under Monochromatic Illumination. American Journal of Science, Engineering and Technology, 11(1), 1-9. https://doi.org/10.11648/j.ajset.20261101.11

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    Sambou, G.; Wade, I.; Diedhiou, A.; Diallo, K.; Dieng, M. The Effects of the Angle of Incidence and Gallium Doping Level on the Performance of a CIGS Solar Cell Studied Under Dynamic Frequency Under Monochromatic Illumination. Am. J. Sci. Eng. Technol. 2026, 11(1), 1-9. doi: 10.11648/j.ajset.20261101.11

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    AMA Style

    Sambou G, Wade I, Diedhiou A, Diallo K, Dieng M. The Effects of the Angle of Incidence and Gallium Doping Level on the Performance of a CIGS Solar Cell Studied Under Dynamic Frequency Under Monochromatic Illumination. Am J Sci Eng Technol. 2026;11(1):1-9. doi: 10.11648/j.ajset.20261101.11

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  • @article{10.11648/j.ajset.20261101.11,
      author = {Gerome Sambou and Ibrahima Wade and Aliou Diedhiou and Khamissa Diallo and Moustapha Dieng},
      title = {The Effects of the Angle of Incidence and Gallium Doping Level on the Performance of a CIGS Solar Cell Studied Under Dynamic Frequency Under Monochromatic Illumination},
      journal = {American Journal of Science, Engineering and Technology},
      volume = {11},
      number = {1},
      pages = {1-9},
      doi = {10.11648/j.ajset.20261101.11},
      url = {https://doi.org/10.11648/j.ajset.20261101.11},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajset.20261101.11},
      abstract = {This article presents a model for studying a basic CIGS solar cell in dynamic frequency mode under monochromatic illumination. The study begins by solving the differential equation that highlights the expression of minority carrier density, followed by those of photocurrent density, photovoltage, short-circuit photocurrent density, and open-circuit photovoltage. This work finalizes the identification and study of the expressions for the shape factor, power, and conversion efficiency of the photovoltaic cell. The study of the dynamic impedance of the basic CIGS solar cell using Bode and Nyquist diagrams is also developed in this work. Thus, we observe that an increase in the angle of incidence tends to decrease the power of the photovoltaic cell, the form factor, and the conversion efficiency. On the other hand, increasing the gallium doping rate tends to improve the cell's performance. Furthermore, the results obtained from the impedance study show the existence of two specific pulsation zones. The first zone [0 rad⁄s; 3.16.107 rad⁄s] where the modulus is a constant; this is the static regime. The second zone ]3.16.107 rad⁄s; 108 rad⁄s [where the modulus increases; this is the dynamic regime. An increase in the angle of incidence with the dynamic impedance modulus is observed. Furthermore, the variation in the angle of incidence has no effect on the resonance frequency or phase. Furthermore, increasing the gallium doping level increases the dynamic resistance modulus. Subsequently, a slight decrease in the impedance phase is observed, synonymous with fluctuations in the pulse limiting the phase shift effects between the signal and the carriers produced. Finally, the Bode and Nyquist representations of the dynamic impedance show that inductive effects remain dominant.},
     year = {2026}
    }
    

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  • TY  - JOUR
    T1  - The Effects of the Angle of Incidence and Gallium Doping Level on the Performance of a CIGS Solar Cell Studied Under Dynamic Frequency Under Monochromatic Illumination
    AU  - Gerome Sambou
    AU  - Ibrahima Wade
    AU  - Aliou Diedhiou
    AU  - Khamissa Diallo
    AU  - Moustapha Dieng
    Y1  - 2026/01/31
    PY  - 2026
    N1  - https://doi.org/10.11648/j.ajset.20261101.11
    DO  - 10.11648/j.ajset.20261101.11
    T2  - American Journal of Science, Engineering and Technology
    JF  - American Journal of Science, Engineering and Technology
    JO  - American Journal of Science, Engineering and Technology
    SP  - 1
    EP  - 9
    PB  - Science Publishing Group
    SN  - 2578-8353
    UR  - https://doi.org/10.11648/j.ajset.20261101.11
    AB  - This article presents a model for studying a basic CIGS solar cell in dynamic frequency mode under monochromatic illumination. The study begins by solving the differential equation that highlights the expression of minority carrier density, followed by those of photocurrent density, photovoltage, short-circuit photocurrent density, and open-circuit photovoltage. This work finalizes the identification and study of the expressions for the shape factor, power, and conversion efficiency of the photovoltaic cell. The study of the dynamic impedance of the basic CIGS solar cell using Bode and Nyquist diagrams is also developed in this work. Thus, we observe that an increase in the angle of incidence tends to decrease the power of the photovoltaic cell, the form factor, and the conversion efficiency. On the other hand, increasing the gallium doping rate tends to improve the cell's performance. Furthermore, the results obtained from the impedance study show the existence of two specific pulsation zones. The first zone [0 rad⁄s; 3.16.107 rad⁄s] where the modulus is a constant; this is the static regime. The second zone ]3.16.107 rad⁄s; 108 rad⁄s [where the modulus increases; this is the dynamic regime. An increase in the angle of incidence with the dynamic impedance modulus is observed. Furthermore, the variation in the angle of incidence has no effect on the resonance frequency or phase. Furthermore, increasing the gallium doping level increases the dynamic resistance modulus. Subsequently, a slight decrease in the impedance phase is observed, synonymous with fluctuations in the pulse limiting the phase shift effects between the signal and the carriers produced. Finally, the Bode and Nyquist representations of the dynamic impedance show that inductive effects remain dominant.
    VL  - 11
    IS  - 1
    ER  - 

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