Optical Optimization of InGaN Solar Cells Via Doping and Thickness Control

Sada Traore; Baboucar Fickou; Moustapha Thiame; Modou Tine

doi:doi:10.11648/j.ijsge.20251403.19

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| Peer-Reviewed

Optical Optimization of InGaN Solar Cells Via Doping and Thickness Control

Sada Traore

, Baboucar Fickou

, Moustapha Thiame^*

, Modou Tine

Published in International Journal of Sustainable and Green Energy (Volume 14, Issue 3)

Received: 15 August 2025 Accepted: 27 August 2025 Published: 19 September 2025

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Abstract

Optical Optimization of InGaN Solar Cells Via Doping and Thickness Control

Published in	International Journal of Sustainable and Green Energy (Volume 14, Issue 3)
DOI	10.11648/j.ijsge.20251403.19
Page(s)	225-233
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2025. Published by Science Publishing Group

Keywords

Doping, Layer Thickness, Optical Properties, Transmittance, Absorbance, External Quantum Efficiency

1. Introduction

The development of renewable energy sources, particularly photovoltaics, is a major priority to address global climate and energy challenges. Among the most promising materials, the semiconductor alloy InₓGa₁₋ₓN stands out for its remarkable optoelectronic properties, notably due to its tunable bandgap depending on composition. In particular, a high indium content leads to a reduction in the bandgap energy

[1, 2]

, thereby extending the material’s absorption capability across the solar spectrum.

Simulating this material is therefore essential for the design and optimization of optoelectronic devices such as light-emitting diodes (LEDs)

[3]

, lasers

[4]

, and solar cells

[5]

. Rich in indium, InGaN exhibits highly favorable characteristics for high-efficiency multi-junction solar cells

[6]

, particularly due to its high radiation tolerance, elevated electron mobility

[7]

, and strong absorption coefficient

[8]

The bandgap of InₓGa₁₋ₓN can range from 0.7 to 3.42 eV

[9, 10]

, allowing it to cover a wide portion of the solar spectrum. Furthermore, several studies have demonstrated the potential of binary alloys such as InN and GaN for next-generation photovoltaic applications, with projected theoretical efficiencies of up to 34% for double-junction tandem cells and 37% for triple-junction cells

[11]

Despite the numerous advantages of InₓGa₁₋ₓN, its use in photovoltaic devices remains constrained by technological challenges related to the growth of high-quality layers, lattice mismatches, and the optimization of physical and geometrical parameters that affect optical performance. In particular, the precise influence of doping and absorber layer thickness on carrier generation, spectral absorption, and quantum efficiency remains insufficiently quantified in the literature, especially in the context of integrated numerical modeling.

Many studies have focused on the analysis of the fundamental properties of InGaN and its potential for optoelectronic applications. The pioneering work of S. Nakamura et al. notably demonstrated the feasibility of growing indium-rich layers for LEDs and lasers

[3, 4]

. More recent research has investigated tandem solar structures based on InGaN and their high theoretical efficiency

[6, 11]

. However, most of these studies have focused on global electrical performance, without addressing in detail the coupled effects of doping (N) and thickness (d) on key optical parameters such as absorbance, transmittance, and external quantum efficiency.

This study aims to address this gap by systematically analyzing the impact of doping and absorber layer thickness on the optical behavior of an InₓGa₁₋ₓN-based solar cell (with x = 0.54). The main objective is to identify the optimal conditions that maximize the external quantum efficiency (EQE).

2. Theorical Study

2.1. The Bandgap Energy

The bandgap is a fundamental concept in semiconductor physics. It represents the minimum energy an electron must acquire to transition from the valence band to the conduction band, thereby contributing to the material’s electrical conductivity.

Moreover, the bandgap energy (Eg) of the InGaN (indium gallium nitride) alloy strongly depends on its molar composition, i.e., the proportion of indium (In) relative to gallium (Ga). InGaN is a direct bandgap semiconductor, and its energy gap can be tuned between that of GaN (3.4 eV) and InN (0.7 eV).

The expression of the bandgap as a function of the composition

x

[12, 13]

is given by the following relation:

E_{g} (x) = x . E_{g}^{InN} + (1 - x) . E_{g}^{GaN} - b . x . (1 - x)

(1)

Where

E_{g}^{InN} = 0.7 eV

and

E_{g}^{GaN} = 3.4 eV

and b = 1.43 is the bowing parameter, which accounts for the non-linear variation of Eg

[14]

In single-junction solar cells, the optimal selection of the indium fraction x is crucial to achieving a bandgap that maximizes photovoltaic conversion. Simulations show that an indium composition around 60% (

x = 0.6)

provides a good trade-off between light absorption and output voltage, thereby improving overall efficiency

[7]

In addition, the bandgap energy is influenced by external parameters such as temperature and doping level. These dependencies must be considered carefully, as Eg tends to decrease with increasing temperature

[15]

, following an empirical relation similar to Varshni’s law. In contrast, the doping level influences the bandgap indirectly through the Burstein–Moss effect, which shifts the Fermi level upward into the conduction band. Doping also affects carrier recombination and mobility, thereby modifying the optoelectronic properties linked to the band structure.

The optical bandgap widening due to carrier concentration N, induced by the Burstein–Moss effect, is given by the following expression

[16]

∆ E_{g} = \frac{ℏ^{2}}{{2 . me}^{*} (x)} {(3 π^{2} N)}^{2 / 3}

(2)

N is the carrier concentration (cm^-3), ℏ is the reduced Planck constant,

{me}^{*} (x)

is the effective mass of electrons, which depends on the alloy composition.

The effective mass can be estimated using linear interpolation:

{me}^{*} (x) = x . m_{eff}^{InN} + (1 - x) m_{eff}^{GaN}

(3)

Taking into account the Burstein–Moss effect, the expression for the gap energy, which depends on both the doping and the indium fraction x, can be written as follows:

E_{g} (x, N) = E_{g} (x) + ∆ E_{g} (N)

(4)

Based on this expression, Table 1 summarizes the evolution of the gap energy and wavelength as a function of the doping concentration N.

Table 1. Variation of Eg, N and

λ

$N ({cm}^{-3})$	$10^{16}$	$10^{17}$	$10^{18}$	$10^{19}$	$10^{20}$
Eg (eV)	1.705	1.709	1.725	1.772	1.923
$λ (nm)$	727.4	725.3	719.04	699.7	644.9

Table 1 shows the variation in bandgap energy and cutoff wavelength as a function of the doping level.

As observed, increasing the doping concentration leads to an apparent widening of the optical bandgap, attributed to the Burstein–Moss effect. This shift results in a blue shift of the absorption edge, meaning the cutoff wavelength moves toward shorter wavelengths.

To better visualize the evolution of optical parameters as a function of doping, the following plots (Figure 1a and Figure 1b) provide a graphical representation of the data presented in Table 1. The first figure shows the variation of the bandgap energy Eg(N), while the second illustrates the evolution of the cutoff wavelength λ(N) with respect to the carrier concentration.

Download: Download full-size image

Figure 1. Bandgap energy (Figure 1.a) and cutoff wavelength (Figure 1.b) as a function of doping.

The plots confirm that increasing the doping concentration leads to a widening of the optical bandgap Eg (Figure 1a), accompanied by a blue shift, as indicated by the decrease in the cutoff wavelength λ (Figure 1b). This behavior, attributed to the Burstein–Moss effect, demonstrates that doping can be used to tune the material’s spectral response, although careful optimization is required to avoid compromising overall device performance.

2.2. Absorption Coefficient

The absorption coefficient of the InₓGa₁₋ₓN alloy is influenced by several factors, including the molar composition (

x

), temperature, doping level (N), and the wavelength of the incident light. Its expression depends strongly on the composition xxx, with a nonlinear relationship. Moreover, studies have shown that all group III-nitride materials in the wurtzite phase exhibit a direct bandgap, which is favorable for efficient light absorption.

The expression for the absorption coefficient α\alphaα, accounting for the dependence on photon energy, doping, and composition, is derived from the model proposed in

[17-19]

and is given as:

α (E_{ph}, x, N) = 10^{5} \sqrt{C (x) (E_{ph} - E_{g} (x, N)) + D (x) {(E_{ph} - E_{g} (x, N))}^{2}}

(5)

E_ph is the photon energy (in eV), dependent on the wavelength,

E_{g} (x, N)

is the bandgap energy modified by composition and doping, C(x) and D(x) are composition-dependent parameters, given by:

C (x) = 3.52 - 18.29 x + 40.43 x^{2} - 37.79 x^{3} + 12.87 x^{4}

(6)

D (x) = - 0.66 + 4.05 x - 2.92 x^{2}

(7)

2.3. Refractive Index

In this section, we investigate the influence of the absorber layer thickness and doping concentration on the refractive index of InₓGa₁₋ₓN.

The refractive index n is calculated using the Adachi model, given by the following expression

[20]

n (E_{p h}, x, N) = \sqrt{A {(\frac{E_{p h}}{E_{g (x, N)}})}^{- 2} ∙ [2 - \sqrt{1 + \frac{E_{p h}}{E_{g (x, N)}}} - \sqrt{1 - \frac{E_{p h}}{E_{g (x, N)}}}] + B}

(8)

Where A and B are empirical parameters dependent on the indium content.

For the InGaN alloy, these parameters are determined through linear interpolation between the values for InN and GaN

[20]

A^{InGaN} = 13.55 x + 9.31 (1 - x)

(9)

and

B^{InGaN} = 2.05 x + 3.03 (1 - x)

(10)

3. Results and Discussion

Our reference structure is shown in Figure 2. It is a single-junction solar cell structure

[7]

based on

{In}_{0.54} {Ga}_{0.46} N

. It consists of: An antireflection coating, deposited on the surface to minimize optical losses due to reflection and to increase the photon flux entering the cell.

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Figure 2. Structure of a single-junction InGaN solar cell.

The active P-N layers: the P-layer represents the absorbing region, doped with P-type impurities, and is responsible for carrier generation and collection under illumination. The N-layer forms the N-type region, which, together with the P-layer, establishes the P–N junction that enables the separation of photogenerated carriers (electrons and holes).

We analyze the evolution of the bandgap energy (Eg) and the cutoff wavelength of the InₓGa₁₋ₓN material as a function of the absorber layer thickness, under different doping conditions. The objective is to explore several alloy compositions (various values of x) in order to identify the optimal configuration that provides a bandgap well-suited for maximum absorption of the solar spectrum. This approach allows for evaluating different InₓGa₁₋ₓN compositions to determine the bandgap that offers the best compromise for solar energy conversion.

Download: Download full-size image

Figure 3. Bandgap energy and cutoff wavelength as a function of molar composition x.

The Figure 3 shows the evolution of the bandgap energy Eg and the cutoff wavelength λ as a function of the indium molar fraction x, for different doping levels. It highlights an inverse correlation between Eg and λ, as well as the influence of doping on the bandgap widening (Burstein–Moss effect). The optimal point xopt=0.54 corresponds to a bandgap of 1.6 eV, which is ideal for maximizing solar spectrum absorption, making it a key parameter for optimizing InGaN solar cells.

Figure 4 shows the modeling of the refractive index of InₓGa₁₋ₓN as a function of doping concentration and layer thickness. This modeling helps to understand how these parameters affect the optical behavior of the material, particularly the light propagation within the solar cell.

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Figure 4. (4a) Variation of the refractive index n as a function of the doping rate N and thickness d for the alloy

{In}_{0.54} {Ga}_{0.46} N

and (4b) Variation of n as a function of N for a thickness.

d = 0.4 µm

and

x_{opt} = 54 %

The simulation results show that the refractive index decreases with increasing doping concentration. However, the effect of doping remains modest for doping levels below

10^{18} {cm}^{- 3}

. From

10^{19} {cm}^{- 3}

10^{20} {cm}^{- 3}

, the refractive index can drop significantly. This behavior reflects the plasmonic response of free electrons (Drude model) as well as the reduction in the density of available states for optical absorption (Burstein-Moss effect). This affects the absorption rate of solar cells.

In Figure 4a, the graph shows that doping has a strong influence on the optical index of In_0.54Ga_0.46N, unlike the layer thickness. This information is crucial for the design of solar cells or optoelectronic devices, as it enables the tuning of optical properties through doping, while the thickness can be adjusted for other purposes (absorption, transport, etc.).

This variation in refractive index with doping directly influences the optical properties of the material, particularly the transmittance (Figure 5), which must be analyzed to evaluate the solar cell's efficiency. The spectral transmittance

T (λ, N, x, d)

, which describes the fraction of light transmitted through the material, is expressed by the following relationship:

T (λ, N, x, d) = {(1 - R (λ, x, N))}^{2} ∙ e^{- α (λ, x, N) d}

(11)

Where

R (λ, x, N)

is the reflection coefficient and

α (λ, x, N)

is the optical absorption coefficient.

Download: Download full-size image

Figure 5. Transmittance as a function of wavelength for different thicknesses (5a) and doping Levels (5b) with

x = 54 %

The transmittance generally decreases with increasing thickness d. The thicker the layer, the more light is absorbed, leading to a reduction in transmittance. This decrease is more pronounced in the spectral region close to the material’s absorption edge. This trend is consistent with the Beer–Lambert absorption law:

T (λ) = e^{- α (λ) ∙ d}

(12)

In conclusion, a greater thickness improves absorption (beneficial for photocurrent generation), but reduces transmittance, which could be detrimental for tandem cell structures. Excessive doping degrades transmittance, especially in the infrared (IR) region, due to free carrier absorption and spectral shifting. Therefore, optimization involves finding a trade-off: a thickness sufficient to ensure effective absorption, and a moderate doping level to limit optical losses while maintaining good electrical conductivity.

Following the analysis of transmittance, which helps evaluate the optical losses due to light passing through the material, it is essential to examine the absorbance in order to quantify the efficiency of photon absorption directly linked to carrier generation in the InGaN solar cell (Figure 6).

The analysis of absorbance emerges as a complementary step to that of transmittance, as it allows the estimation of the fraction of light energy effectively absorbed by the active layer.

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Figure 6. Absorbance and Transmittance as a Function of Layer Thickness (a) and Doping Level (b) with

x = 54 %

Figure 6a and 6b above illustrate the joint evolution of the absorbance and transmittance of the InGaN material as a function of the thickness of the absorbing layer (6a) and the doping level N (6b).

The analysis (Figure 6a) shows that the absorbance increases slightly with thickness, from 18.3% (100 nm) to 18.8% (600 nm), while the transmittance decreases almost linearly from 65% to 60%, in accordance with Beer–Lambert's law. The optimal thickness is between 300 and 400 nm, maximizing absorption while limiting optical losses.

Regarding doping (Figure 6b), a low concentration (≈10¹⁶ cm^-3) results in maximum transmittance (~65%) and minimum absorbance (~18.3%). Absorbance reaches a maximum (~18.6%) at around 10¹² cm^-3 before decreasing at high doping levels, due to the Burstein–Moss effect and free carrier scattering.

Therefore, a thickness of approximately 500 nm and doping between 10¹⁷ and 10¹² cm^-3 constitute an optimal compromise for maximizing photovoltaic performance, in agreement with the findings reported by Mesrane et al.

[7]

The use of piecewise cubic Hermite interpolation (PCHIP) made it possible to obtain transmittance and absorbance models as a function of layer thickness.

T (d) = 65.3 + 0.008 d

(13)

with

R² = 0.98

(14)

Ab (d) = 10^{- 6} d^{2} + 6.89 ∙ 10^{- 4} d + 18.09

(15)

with

R^{2} = 0.97

(16)

These models confirm the trend observed experimentally and enable the optical behavior to be predicted for any intermediate thickness.

To support the previous analyses, the following tables present numerical values of absorbance, transmittance, and external quantum efficiency (EQE) as functions of the active layer thickness (Table 2) and doping level N (Table 3), for different wavelengths. These data allow a more precise evaluation of the impact of these parameters on the optoelectronic behavior of InGaN material.

Table 2. Values of Absorbance, Transmittance, and External Quantum Efficiency (EQE) as a Function of Layer Thickness d.

$d (nm)$	$Absorbance (%)$				$Transmittance (%)$				EQE (%)
50	13.6	18.2	18.8	17.1	82.1	64.9	58.9	61.1	97.3	92.8	87.5
100	13.8	18.2	18.9	17.1	81.4	64.5	58.7	61.1	97.3	92.8	87.5
200	14.2	18.4	18.9	17.1	79.9	63.7	58.3	61.1	97.3	92.8	87.5
300	14.6	18.5	19	17.1	78.5	62.9	58	61.1	97.3	92.8	87.5
400	15	18.7	19.1	17.1	77.1	62.1	57.6	61.1	97.3	92.8	87.5
500	15.5	18.8	19.2	17.1	75.7	61.3	57.2	61.1	97.3	92.8	87.5
600	15.9	19	19.3	17.1	74.3	60.5	56.8	61.1	97.3	92.8	87.5
$λ (nm)$	360	600	700	800	360	600	700	800	360	600	700

Table 3. Values of Absorbance, Transmittance, and External Quantum Efficiency (EQE) as a Function of Doping Level N.

$N ({cm}^{-3})$	$Absorbance (%)$				$Transmittance (%)$				EQE (%)
$10^{16}$	14	18.3	18.9	17.4	80.4	65	59.3	60	97.7	93.7	89
$10^{17}$	14.1	18.3	18.9	17.4	80.3	64.9	59.2	60.2	97.3	92.8	87.5
$10^{18}$	14.2	18.4	18.9	17.1	80.1	64.5	58.7	61.1	96.1	89.6	81.8
$10^{19}$	14.8	18.6	19.1	16.2	78.8	62.5	56.8	63.5	91.9	78.1	58.2
$λ (nm)$	360	600	700	800	360	600	700	800	360	600	700

These numerical results highlight the sensitivity of the optical response of InGaN material to physical design parameters. While increasing the layer thickness enhances absorption without significantly impairing performance, excessive doping, on the other hand, leads to a marked degradation in both transmittance and external quantum efficiency (EQE).

Thus, optimizing an InGaN solar cell requires a trade-off between thickness and doping: an active layer thickness between 300 and 500 nm, combined with a doping level in the range of

10^{17}

10^{18} {cm}^{- 3}

, appears to be the most favorable configuration for achieving efficient photon absorption and effective carrier collection.

To better visualize the quantitative impact of doping and thickness on external quantum efficiency, the following graphs illustrate the evolution of EQE as a function of doping level N (left) and active layer thickness (right). These graphical representations visually confirm the trends observed in the previous tables.

Download: Download full-size image

Figure 7. External Quantum Efficiency as a Function of Doping Level (7a) and Layer Thickness (7b).

The two graphs clearly and succinctly confirm the distinct effects of doping and thickness on the optical performance of the InGaN cell.

In Figure 7a, a significant decrease in EQE is observed as doping increases, particularly beyond 10¹² cm^-3. This trend highlights the negative influence of high doping levels on the collection of photogenerated carriers, due to non-radiative recombination and free carrier absorption losses.

In Figure 7b, the variation in EQE as a function of thickness is negligible within the considered range (up to 700 nm), indicating that absorbance is already sufficient at low thickness to ensure excellent carrier collection. This confirms that, under certain spectral conditions, increasing the thickness does not provide any significant improvement in external quantum efficiency.

These results underline the importance of controlling the doping level to optimize the performance of InGaN-based solar cells, while the thickness can be adjusted more flexibly without compromising the overall optoelectronic efficiency.

Our results fall within the range of previously published performances:

Nor Bochra et al.

[21]

studied the characterization of InGaN solar cells and highlighted the high potential of this material for photovoltaic applications.

Benmoussa et al.

[22]

reported an efficiency of 22.99% for an In_0.52Ga_0.48N solar cell simulated using AMPS-1D, with layer thicknesses of 600 nm (P) and 230 nm (N), and a doping concentration of 10¹⁵ cm^-3.

These comparisons demonstrate that our simulation results are consistent with the expected performance range of InGaN solar cells.

4. Conclusion

This study highlights the critical importance of controlling doping and active layer thickness in InGaN solar cells.

Simulations show that moderate doping and optimized thickness allow for the maximization of external quantum efficiency (EQE), a key parameter for photovoltaic performance.

A moderate doping level (10¹⁷ cm^-3) and an optimized thickness around 300–500 nm offer the best optical performance by maximizing EQE while minimizing losses.

These results can serve as a guideline for the experimental design of high-performance InGaN cells and may be extended to multi-junction structures for advanced solar applications.

Abbreviations

EQE	External Quantum Efficiency [-]
Eg	Gap energy [ev]
N	doping level [cm^-3]
x	indium fraction [-]
λ	wavelength [nm]
d	Layer Thickness [nm]
	absorption coefficient [m^-1]
R	reflection coefficient [-]
n	refractive index [-]
T	transmittance [-]
Ab	Absorbance [-]

Acknowledgments

We thank the authorities of Assane Seck University of Ziguinchor for agreeing to support the production of this article.

Author Contributions

Sada Traore: Data curation, Formal Analysis, Funding acquisition, Methodology, Project administration, Supervision, Validation, Visualization, Writing – review & editing

Baboucar Fickou: Conceptualization, Formal Analysis, Funding acquisition, Project administration, Resources, Supervision, Validation, Visualization, Writing – review & editing

Moustapha Thiame: Conceptualization, Data curation, Funding acquisition, Investigation, Project administration, Resources, Software, Visualization, Writing – original draft

Modou Tine: Conceptualization, Data curation, Funding acquisition, Investigation, Project administration, Resources, Software, Visualization, Writing – original draft

Conflicts of Interest

The authors declare no conflicts of interest.

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Traore, S., Fickou, B., Thiame, M., Tine, M. (2025). Optical Optimization of InGaN Solar Cells Via Doping and Thickness Control. International Journal of Sustainable and Green Energy, 14(3), 225-233. https://doi.org/10.11648/j.ijsge.20251403.19

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ACS Style

Traore, S.; Fickou, B.; Thiame, M.; Tine, M. Optical Optimization of InGaN Solar Cells Via Doping and Thickness Control. Int. J. Sustain. Green Energy 2025, 14(3), 225-233. doi: 10.11648/j.ijsge.20251403.19

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AMA Style

Traore S, Fickou B, Thiame M, Tine M. Optical Optimization of InGaN Solar Cells Via Doping and Thickness Control. Int J Sustain Green Energy. 2025;14(3):225-233. doi: 10.11648/j.ijsge.20251403.19

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@article{10.11648/j.ijsge.20251403.19,
  author = {Sada Traore and Baboucar Fickou and Moustapha Thiame and Modou Tine},
  title = {Optical Optimization of InGaN Solar Cells Via Doping and Thickness Control
},
  journal = {International Journal of Sustainable and Green Energy},
  volume = {14},
  number = {3},
  pages = {225-233},
  doi = {10.11648/j.ijsge.20251403.19},
  url = {https://doi.org/10.11648/j.ijsge.20251403.19},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijsge.20251403.19},
  abstract = {Optical Optimization of InGaN Solar Cells Via Doping and Thickness Control
},
 year = {2025}
}

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TY  - JOUR
T1  - Optical Optimization of InGaN Solar Cells Via Doping and Thickness Control

AU  - Sada Traore
AU  - Baboucar Fickou
AU  - Moustapha Thiame
AU  - Modou Tine
Y1  - 2025/09/19
PY  - 2025
N1  - https://doi.org/10.11648/j.ijsge.20251403.19
DO  - 10.11648/j.ijsge.20251403.19
T2  - International Journal of Sustainable and Green Energy
JF  - International Journal of Sustainable and Green Energy
JO  - International Journal of Sustainable and Green Energy
SP  - 225
EP  - 233
PB  - Science Publishing Group
SN  - 2575-1549
UR  - https://doi.org/10.11648/j.ijsge.20251403.19
AB  - Optical Optimization of InGaN Solar Cells Via Doping and Thickness Control

VL  - 14
IS  - 3
ER  -

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Author Information

Sada Traore

Laboratory of Chemistry and Physics of Materials, Assane Seck University of Ziguinchor, Ziguinchor, Senegal; Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, Cheikh Anta Diop University, Dakar, Senegal

Contact Email

http://orcid.org/0009-0001-0713-1586
Baboucar Fickou

Laboratory of Chemistry and Physics of Materials, Assane Seck University of Ziguinchor, Ziguinchor, Senegal

Contact Email

http://orcid.org/0009-0007-8885-5036
Moustapha Thiame

Laboratory of Chemistry and Physics of Materials, Assane Seck University of Ziguinchor, Ziguinchor, Senegal

Contact Email

http://orcid.org/0009-0000-1760-2997
Modou Tine

Laboratory of Chemistry and Physics of Materials, Assane Seck University of Ziguinchor, Ziguinchor, Senegal

Contact Email

http://orcid.org/0009-0002-2511-1009

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Plain Text BibTeX RIS

APA Style

Traore, S., Fickou, B., Thiame, M., Tine, M. (2025). Optical Optimization of InGaN Solar Cells Via Doping and Thickness Control. International Journal of Sustainable and Green Energy, 14(3), 225-233. https://doi.org/10.11648/j.ijsge.20251403.19

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ACS Style

Traore, S.; Fickou, B.; Thiame, M.; Tine, M. Optical Optimization of InGaN Solar Cells Via Doping and Thickness Control. Int. J. Sustain. Green Energy 2025, 14(3), 225-233. doi: 10.11648/j.ijsge.20251403.19

Copy | Download

AMA Style

Traore S, Fickou B, Thiame M, Tine M. Optical Optimization of InGaN Solar Cells Via Doping and Thickness Control. Int J Sustain Green Energy. 2025;14(3):225-233. doi: 10.11648/j.ijsge.20251403.19

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@article{10.11648/j.ijsge.20251403.19,
  author = {Sada Traore and Baboucar Fickou and Moustapha Thiame and Modou Tine},
  title = {Optical Optimization of InGaN Solar Cells Via Doping and Thickness Control
},
  journal = {International Journal of Sustainable and Green Energy},
  volume = {14},
  number = {3},
  pages = {225-233},
  doi = {10.11648/j.ijsge.20251403.19},
  url = {https://doi.org/10.11648/j.ijsge.20251403.19},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijsge.20251403.19},
  abstract = {Optical Optimization of InGaN Solar Cells Via Doping and Thickness Control
},
 year = {2025}
}

Copy | Download

TY  - JOUR
T1  - Optical Optimization of InGaN Solar Cells Via Doping and Thickness Control

AU  - Sada Traore
AU  - Baboucar Fickou
AU  - Moustapha Thiame
AU  - Modou Tine
Y1  - 2025/09/19
PY  - 2025
N1  - https://doi.org/10.11648/j.ijsge.20251403.19
DO  - 10.11648/j.ijsge.20251403.19
T2  - International Journal of Sustainable and Green Energy
JF  - International Journal of Sustainable and Green Energy
JO  - International Journal of Sustainable and Green Energy
SP  - 225
EP  - 233
PB  - Science Publishing Group
SN  - 2575-1549
UR  - https://doi.org/10.11648/j.ijsge.20251403.19
AB  - Optical Optimization of InGaN Solar Cells Via Doping and Thickness Control

VL  - 14
IS  - 3
ER  -

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